GBU10005 THRU GBU1010
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B047
Rev. 2.3, 08-Apr-22
www.21yangjie.com
Bridge Rectifiers
Features
● UL recognition, file #E230084
● Glass passivated chip junction
● Ideal for printed circuit boards
● High surge current capability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
General purpose use in AC/DC bridge full wave rectification for
monitor, TV, printer, power supply, switching mode power supply,
adapter, audio equipment, and home appliances applications.
Mechanical Data
●
P
ackage: GBU
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
As marked on body
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
GBU10005 GBU1001 GBU1002 GBU1004 GBU1006 GBU1008 GBU1010
Device marking code
GBU10005 GBU1001 GBU1002 GBU1004 GBU1006 GBU1008 GBU1010
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
50 100 200 400 600 800 1000
Maximum RMS Voltage
V
RMS
V 35 70 140 280 420 560 700
Maximum DC blocking Voltage
V
DC
V 50 100 200 400 600 800 1000
Average rectified output
current @60Hz sine
wave, R-load
With heatsink
Tc =110℃
I
O
A
10.0
Without heatsink
Ta =25℃
3.2
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
I
FSM
A
175
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃
350
Current squared time
@1ms≤t≤8.3ms Tj=25℃, Rating of per diode
I
2
t
A
2
S
127
Storage temperature
T
stg
℃
-55 ~ +150
Junction temperature
T
j
℃
-55 ~ +150
Dielectric strength
@ Terminals to case, AC 1 minute
V
dis
KV
2.5
Mounting torque
@Recommend torque：5kgꞏcm
Tor
kgꞏ cm
8
COMPLIANT
RoHS
~
~
GBU10005 THRU GBU1010
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B047
Rev. 2.3, 08-Apr-22
www.21yangjie.com
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER
S
YMBO
L
UNIT TEST CONDITIONS
GBU10005 GBU1001 GBU1002 GBU1004 GBU1006 GBU1008 GBU1010
Maximum instantaneous
forward voltage drop per diode
V
F
V
I
FM
=5.0A
1.0
Maximum DC reverse current
at rated DC blocking voltage
per diode
I
R
μA
T
j
=25℃
5
T
j
=125℃
100
Typical junction capacitance Cj pF
Measured at 1MHz
and Applied
Reverse Voltage of
4.0 V.D.C
50
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
GBU10005 GBU1001 GBU1002 GBU1004 GBU1006 GBU1008 GBU1010
Thermal
Resistance
Between junction and ambient,
Without heatsink
R
θJ-A
℃/W
25.0
Between junction and case,
With heatsink
R
θJ-C
2.0
Note: Device mounted on 75mm x 45mm x 5.5mm Aluminum Plate Heatsink.
■
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
GBU10005 THRU GBU1010
B1 Approximate 3.96 20 1000 2000 TUBE
■
Characteristics (Typical)
80
0
2.0
FIG1:Io-Tc Curve
160
with heatsink
90 100 110 120 130 140 150
Tc
heatsink
4.0
6.0
8.0
10
12
Case Temperature(
℃)
Average Forward Output(A)
without heatsink
1
0
2
5
10 20 50 100
87.5
175
262.5
non-repetitive
Tj=25
℃
FIG2:Surge Forward Current Capability
0
8.3ms
IFSM
8.3ms
Peak Forward Surge Current(A)
Number of Cycles
half sine wave
1cycle