DB151S THRU DB157S
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S011
Rev. 2.5, 01-Jul-22
www.21yangjie.com
Bridge Rectifiers
Features
● UL recognition, file #E313149
● Glass passivated chip junction
● Ideal for automated placement
● High surge current capability
● Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Typical Applications
General purpose use in AC/DC bridge full wave rectification for
SMPS, lighting ballast, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Mechanical Data
●
P
ackage: DBS
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
As marked on body
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
DB151S DB152S DB153S DB154S DB155S DB156S DB157S
Device marking code
DB151S DB152S DB153S DB154S DB155S DB156S DB157S
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
50 100 200 400 600 800 1000
Maximum RMS Voltage
V
RMS
V 35 70 140 280 420 560 700
Maximum DC blocking Voltage
V
DC
V 50 100 200 400 600 800 1000
Average rectified output current
@60Hz sine wave, R-load, Tc=126℃
I
O
A
1.5
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
I
FSM
A
60
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃
120
Current squared time
@1ms≤t≤8.3ms Tj=25℃, Rating of per diode
I
2
t
A
2
s
14.9
Storage temperature
T
stg
℃
-55 ~ +150
Junction temperature
T
j
℃
-55 ~ +150
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT TEST CONDITIONS
DB151S DB152S DB153S DB154S DB155S DB156S DB157S
Maximum instantaneous
forward voltage drop per diode
V
F
V
I
FM
=0.7A
1.0
Maximum DC reverse current
at rated DC blocking voltage
per diode
I
R
μA
T
j
=25℃
5
T
j
=125℃
100
Typical junction capacitance Cj pF
Measured at 1MHz
and Applied Reverse
Voltage of 4.0 V.D.C
19
COMPLIANT
RoHS
DB151S THRU DB157S
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S011
Rev. 2.5, 01-Jul-22
www.21yangjie.com
■
Thermal Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
DB151S DB152S DB153S DB154S DB155S DB156S DB157S
Typical Thermal Resistance
R
θJ-A
℃/W
40.0
R
θJ-L
15.0
R
θJ-C
8.0
Note: Device mounted on P.C.B with 35mm*25mm*1.7mm
■
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
DB151S ~ DB157S
B1 Approximate 0.34 50 5000 20000 TUBE
DB151S ~ DB157S
F1 Approximate 0.34 1500 3000 21000 REEL
■
Characteristics(Typical)
1
0
Peak Forward Surge Current(A)
2 5 10 20 50 100
10
Half sine wave
non-repetitive
Tj=25
℃
FIG2:Surge Forward Current Capability
Number of Cycles
0
8.3ms
1cycle
IFSM
8.3ms
20
30
40
50
60
70
0 20 40 60 80 100
0.01
0.1
1.0
10
100
Tj=125
℃
Tj=25℃
FIG4:Typical Reverse Characteristics
Instantaneous Reverse Current (uA)
Percent of Rated Peak Reverse Voltage (%)
0.8 1.0 1.2 1.4 1.60.6
0.1
0.2
0.5
FIG3: Typical Forward Voltage
1.0
10
20
40
60
5.0
Instantaneous Forward Voltage(V)
Instantaneous Forward Current(A)
0
0
0.3
FIG1:Io-Tc Curve
16040 80 120
0.6
0.9
1.2
1.5
1.8
Average Forward Output Current (A)
Case Temperature (℃)