ESD24VD3BQ
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S4634
Rev.1.0,31-Aug-22
www.21yangjie.com
1- Line, Bi-directional, ESD protection diode
Features
● Transient protection for each line according to
IEC61000-4-2(ESD):
±30kVcontact,±30kVair
IEC61000-4-5:7A(tp=8/20μs)
● Low leakage current
● Ultra low clamping voltage
● RoHS Compliant
● Part no. with suffix “Q” means AEC-Q101 qualified
Applications
●Switches/Buttons
●
TestEquipment/Instrumentation
●
Point‐of‐SaleTerminals
●
MedicalEquipment
●
Notebooks/Desktops/Servers
��
ComputerPeripherals
●
CANBusprotection
●
Automotiveapplications
Mechanical Data
● Package: SOD-323
● Lead Finish: Matte Tin
● Case Material: “Green” Molding Compound
● Moisture Sensitivity: Level 1 per J-STD-020
■
Definitions of electrical characteristics
VRWM
IR
VBR
VCL
IPP
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Clanping voltage
Peak pulse current
IPP
IBR
IR
VCLVRWM VBR
IR
IBR
IPP
VCL VRWMVBR
COMPLIANT
RoHS
SOD‐323
ESD24VD3BQ
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S4634
Rev.1.0,31-Aug-22
www.21yangjie.com
■
Maximum Ratings
PARAMETER SYMBOL LIMITS UNIT
Peak pulse power (t
p
= 8/20μs)
P
pk
300 W
ESD according to IEC61000-4-2 air discharge
V
ESD
±30
KV
ESD according to IEC61000-4-2 contact discharge
±30
Junction temperature T
J
-55~150
℃
Storage temperature T
STG
-55~150
℃
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
■
Electrical Characteristics（T
J
=25℃）
PARAMETER Symbol UNIT Conditions Min Typ Max
Reverse Standoff Voltage V
RWM
V
I
R
≤1μA
24
Reverse breakdown voltage
V
BR
V I
BR
= 1mA
26.7
Reverse leakage current I
R
μA V
RWM
= 24V 1.0
Clamping voltage
1)
V
CL
V
I
PP
= 1A, t
p
= 8/20μs 32
I
PP
= 5A, t
p
= 8/20μs 42
I
PP
= 7A, t
p
= 8/20μs 44
Dynamic resistance
2)
R
DYN
Ω TLP, tp=100ns, I/O to Ground 0.44
PeakPulseCurrent
I
PP
A t
p
= 8/20μs 7
Junction capacitance C
J
pF V
R
= 0V, f = 1MHz 20 40
Notes:
(1). Non-repetitive current pulse, according to IEC61000-4-5.
(2). TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to 16A.
■
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(mg)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
ESD24VD3BQ F2 Approximate 4.5 3000 30000 120000 7 reel