ZN65C1R200L
Preliminary Datasheet
650V, 200mΩ typ., Gallium Nitride (GaN) FET in DFN 8*8
Rev 1.2
Apr 21, 2023
1
1. General Description
The ZN65C1R200L is a 650V, 200
mΩ Gallium Nitride (GaN) FET in an 8 x 8 DFN package. It is a
normally-off device that combines Ziener’s latest high-voltage GaN HEMT with a low voltage silicon
MOSFET to offer superior reliability and performance.
2. Features and Benefits
⚫ JEDEC-qualified GaN technology
⚫
Dynamic R
DS(on)eff
production tested
⚫ Wide gate safety margin
⚫ Capable of reverse conduction
⚫ Low gate charge
⚫ RoHS compliant and Halogen-free packaging
⚫ Achieves increased efficiency in both hard- and soft- switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
⚫ Easy to drive with commonly-used gate drivers
3. Applications
⚫ Fast charger
⚫ Telecom power
⚫ Data center
⚫ Lighting
4. Key Specifications
Table 1. Key Specifications
Symbol Parameter Value Unit
V
DS, max
Drain-source voltage
650 V
I
D, max
Continuous drain current @Tc = 25℃
12 A
R
DS(on), typ
Drain-source on-state resistance
200
mΩ
Q
G, typ
Total gate charge
11.7
nC
Q
RR, typ
Reverse recovered charge
45
nC
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ZN65C1R200L
650V, 200mΩ typ., Gallium Nitride (GaN) FET in DFN 8*8
Rev 1.2
Apr 21, 2023
2
5. Pin Description
Table 2. Pin Description
Pin Description Bottom View Graphic Symbol
G Gate
D Drain
S Source
6. Ordering Information
Table 3. Ordering Information
Part number Package Package Configuration Marking Code
ZN65C1R200L
DFN 8*8
Source
ZN65C1R200L
7. Absolute Maximum Ratings
Table 4. Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Parameter Symbol Min. Max. Unit. Conditions
Drain to source voltage
V
DSS
- 650
V
V
GS
= 0V
Transient drain to source voltage
V
DSS(TR)
- 800
Non-repetitive Pulse for ≤10ms at
25℃
Gate to source voltage
V
GSS
-20 20
Maximum power dissipation
P
D
- 60
W
T
C
= 25℃; Fig.1
Continuous drain current
I
D
- 12
A
T
C
= 25℃
- 8
A
T
C
= 100℃
Pulsed drain current
I
DM
-
28
A
pulsed; t
p
≤ 200µs; T
C
= 25℃
Operating temperature
T
J
-55 150
℃
Storage temperature
T
S
-55 150 ℃
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