MMDT5401Q
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S4970
Rev.1.0,14-Mar-23
www.21yangjie.com
Dual PNP Small Signal Transistor
Features
● Epoxy meets UL-94 V-0 flammability rating
● Moisture Sensitivity Level 1
● Ultra-small surface mount package
● Part no. with suffix “Q” means AEC-Q101 qualified
Application
● Ideal for Medium Power Amplification and Switching
Mechanical Data
●
P
ackage： SOT-363
● Terminals：Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Marking：K4M
■
Equivalent circuit
■
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MMDT5401Q F2 Approximate 0.009g 3000 30000 120000 7” reel
COMPLIANT
RoHS
MMDT5401Q
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S4970
Rev.1.0,14-Mar-23
www.21yangjie.com
■
Maximum Ratings (Ta=25℃ Unless otherwise specified）
Item
Symbol Unit Value
Collector-Base Voltage V
CBO
V -160
Collector-Emitter Voltage V
CEO
V -150
Emitter-Base Voltage V
EBO
V -5
Collector Current I
C
mA -600
Total Device Dissipation
(*)
P
D
mW 200
Thermal Resistance Junction to Ambient
(*)
R
thJA
K/W 625
Junction Temperature T
j
℃
150
Storage Temperature T
STG
℃
-55 to +150
(*) Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch
■
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Item
Symbol Unit Conditions
Min TYP Max
Collector-base breakdown voltage V
CBO
V I
C
= -100μA,I
E
=0
-160
Collector-emitter breakdown voltage V
CEO
V I
C
= -1mA,I
B
=0
-150
Emitter-base breakdown voltage V
EBO
V I
E
= -10μA,I
C
=0
-5
Collector cut-off current I
CBO
nA V
CB
= -120V,I
E
=0
-50
Emmiter cut-off current I
EBO
nA V
EB
= -3V, I
C
=0
-50
DC current gain
h
FE
V
CE
= -5V,I
C
= -1mA
50
h
FE
V
CE
= -5V,I
C
= -10mA 100 300
h
FE
V
CE
= -5V,I
C
= -50mA 50
Collector-emitter saturation voltage V
CE(sat)
V I
C
= -10mA,I
B
= -1mA
-0.2
Collector-emitter saturation voltage V
CE(sat)
V I
C
= -50mA,I
B
= -5mA
-0.5
Base-emitter saturation voltage V
BE(sat)
V I
C
= -10mA,I
B
= -1mA
-1
Base-emitter saturation voltage V
BE(sat)
V I
C
= -50mA,I
B
= -5mA
-1
Output Capacitance Cob pF V
CB
= -10V, I
E
=0, f=1.0MHz 6
Transition frequency fT MHz V
CE
= -10V,I
C
= -10mA,f=100MHz 100