SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DN:T21617A1
http://www.microdiode.com Rev:2021A1 Page :1
SS32C THRU SS3200C
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 °C/10 seconds at terminals
Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere
Mechanical Data
Case : JEDEC DO-214AB/SMC molded plastic body
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end Mounting
Position : Any
Weight
: 0.0077 ounce, 0.22 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Parameter
SYMBOLS
UNITS
Marking Code
MDD
SS32C
MDD
SS33C
MDD
SS34C
MDD
SS35C
MDD
SS36C
MDD
SS38C
MDD
SS310C
MDD
SS3150C
MDD
SS3200C
Maximum repetitive peak reverse voltage
VRRM
20 30 40 50 60 80 100 150 200
V
Maximum RMS voltage
V
RMS
14 21 28 35 42 56 70 105 140
V
Maximum DC blocking voltage
V
DC
20 30 40 50 60 80 100 150 200
V
Maximum average forward rectified current
I
(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
80
A
Maximum instantaneous forward voltage at 3.0A
V
F
0.55 0.70 0.85 0.95
V
Maximum DC reverse current T
A
=25
℃
at rated DCblocking voltage
T
A
=100
℃
I
R
0.5
0.3
mA
5.0
3.0
Typical junction capacitance (NOTE 1)
C
J
450 350
pF
Typical thermal resistance (NOTE 2)
R
JA
50
℃/
W
Operating junction temperature range
T
J
-55to +150
℃
Storage temperature range
T
STG
-55 to +150
℃
Dimensions in inches and (millimeters)
DO-214AB/SMC
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.012(0.305)
0.006(0.152)
0.008(0.203)MAX.
0.103(2.62)
0.079(2.06)
0.126 (3.20)
0.114 (2.90)
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas
Rev:2021A1 Page :2
Typical Characterisitics
The curve above is for reference only.
http://www.microdiode.com
0.1
0
0.4 1.4
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
1.0
10
0.60.2 0.8 1.0 1.2 1.81.6
SS32C/SS34C
SS36C
SS38C/SS312C
SS315C/SS320C
20
Fig.2 Typical Reverse Characteristics
20
40 60 80
0
T
J
=25°C
T
J
=100°C
Percent of Rated Peak Reverse Voltage（%）
100
10
0
10
1
10
2
10
3
10
4
T
J
=75°C
SS32C/SS36C
SS38C~SS320C
Fig.1 Forward Current Derating Curve
Average Forward Current (A)
0.01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance（°C/W）
t, Pulse Duration（sec）
0.1 1 10
Case Temperature (°C)
Fig.4 Typical Junction Capacitance
Junction Capacitance (pF)
Reverse Voltage (V)
10
0.1 10
100
500
20
1001
1000
T
J
=25°C
200
SS32C~SS36C
SS38C~SS320C
20
40
60
80
100
120
00
10 100
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Number of Cycles
8.3 ms Single Half Sine Wave (JEDEC
Method)
1
Instaneous Reverse Current ( μA)
0.6
1.2
1.8
2.4
3.0
3.5
0.0
25 50
75
100 125 150
SS32C THRU SS3200C
Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere