SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DN:T21617A1
http://www.microdiode.com Rev:2021A1 Page :1
SS82C THRU SS820C
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 °C/10 seconds at terminals
Reverse Voltage - 20 to 200 Volts Forward Current - 8.0 Ampere
Mechanical Data
Case : JEDEC DO-214AB/SMC molded plastic body
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end Mounting
Position : Any
Weight
: 0.007 ounce, 0.25 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Dimensions in inches and (millimeters)
DO-214AB/SMC
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.012(0.305)
0.006(0.152)
0.008(0.203)MAX.
0.103(2.62)
0.079(2.06)
0.126 (3.20)
0.114 (2.90)
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
Parameter
SYMBOLS
UNITS
Marking Code
MDD
SS82C
MDD
SS84C
MDD
SS86C
MDD
SS88C
MDD
SS810C
MDD
SS15C
MDD
SS820C
Maximum repetitive peak reverse voltage
VRRM
20
40 60 80 100 150 200
V
Maximum RMS voltage
V
RMS
14
28 42 56 70 105 140
V
Maximum DC blocking voltage
V
DC
20
40 60 80 100 150 200
V
Maximum average forward rectified current
at TL(see fig.1)
I
(AV)
8.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
150
A
Maximum instantaneous forward voltage at 8.0A
V
F
0.55
0.85
V
Maximum DCreverse current T
A
=25
℃
at rated DCblocking voltage
T
A
=100
℃
I
R
1.0
mA
50
Typical junction capacitance (NOTE 1)
C
J
600
pF
Typical thermal resistance (NOTE 2)
R
JA
35
℃/
W
Operating junction temperature range
T
J
-55 to +150
℃
Storage temperature range
T
STG
-55 to +150
℃
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 2.0”x2.0
”(5.0x5.0cm) copper pad areas
0.45
0.70
900
Rev:2021A1 Page :2
Typical Characterisitics
The curve above is for reference only.
http://www.microdiode.com
SS82C THRU SS820C
Reverse Voltage - 20 to 200 Volts Forward Current - 8.0 Ampere
Fig.2 Typical Reverse Characteristics
20 40 60 80
0
T
J
=25°C
T
J
=100°C
Percent of Rated Peak Reverse Voltage（%）
100
10
0
10
1
10
2
10
3
10
4
T
J
=75°C
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
0.01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance（°C/W）
t, Pulse Duration（sec）
0.1 1 10
100
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
10
Number of Cycles at 60Hz
8.3 ms Single Half Sine Wave (JEDEC
Method)
1
50
00
0.1
0
0.5
1
10
1.0 1.5 2.0
20
SS82C
SS84C
SS86C
SS88C/SS820C
125
200
25
75
150
100
175
Fig.4 Typical Junction Capacitance
Junction Capacitance (pF)
Reverse Voltage (V)
10
0.1 10
100
500
20
1001
1000
T
J
=25°C
SS82C/SS84C
Fig.1 Forward Current Derating Curve
2.0
7.0
6.0
8.0
10.0
12.0
0.0
25 50
75
100 125
Average Forward Current (A)
Case Temperature (°C)
150
SS86C/SS820C
Instaneous Reverse Current ( μA)