http://www.sh-greenpower.com Shanghai GreenPower Electronic Co.Ltd. 1
MMDT3904
MMDT3904 Dual Transistor(NPN+NPN)
Feature
Epitaxial planar die construction
Ideal for low power amplification and switching
Marking: K6N
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
0.2
A
Power Dissipation
Pd
0.2
W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55~ +150
℃
ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA ,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA , IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
5
V
Collector cut-off current
ICEO
VCE=40V, I
B
=0V
100
nA
Baes cut-off current
ICBO
VCB=60V, I
E
=0V
100
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
DC current gain
hFE
VCE=5V, IC=1mA
40
VCE=5V, IC=1mA
70
VCE=5V, IC=1mA
100
300
VCE=5V, IC=1mA
60
VCE=5V, IC=1mA
30
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB=1mA
0.2
V
IC=50mA, IB=5mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=10mA, IB=1mA
0.65
0.85
V
IC=50mA, IB=5mA
0.95
V
Transition frequency
fT
VCE= 20V, IC=10mA,f=100MHz
300
MHZ
Collector output capacitance
C
ob
V
CB
=5V,I
E
=0,f=1MHz
4
pF
Noise figure
NF
V
CE
=5V,Ic=0.1mA,f=1kHz,R
S
=1KΩ
5
dB
SOT-363
MMDT3904
http://www.sh-greenpower.com Shanghai GreenPower Electronic Co.Ltd. 2
Typical Characteristics
0.1 1 10 100
0
50
100
150
200
250
300
0 25 50 75 100 125 150
0
100
200
300
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
1 100
0
100
200
300
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
12
14
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
100
200
V
CE
= 1V
T
a
=100
o
C
T
a
=25
o
C
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GAIN h
FE
I
C
h
FE
——
COLLECTOR POWER DISSIPATION
P
c
(mW)
AMBIENT TEMPERATURE T
a
(
℃
)
P
c
—
— T
a
200
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25℃
T
a
=100
℃
β=10
V
BEsat
——
I
C
200
T
a
=25
℃
T
a
=100℃
β=10
V
CEsat
—
— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
10
COLLECTOR CURRENT I
C
(mA)
COMMON
EMITTER
T
a
=25
℃
70uA
63uA
56uA
49uA
42uA
35uA
28uA
21uA
14uA
I
B
=7uA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Static Charact
eristic
200
V
CE
=1V
T
a
=25
℃
T
a
=100
o
C
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(mA)
I
C
—— V
BE