S9018
http://www.microdiode.com
Rev:2021A0 Page :1
SOT-23 Plastic-Encapsulate Transistors
DN:T21525A0
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
MARKING: J8
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 30
V
V
CEO
Collector-Emitter Voltage 15
V
V
EBO
Emitter-Base Voltage 5
V
I
C
Collector Current-Continuous 50 mA
P
C
Collector Power Dissipation 200
mW
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature
-55～+150 ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
S9018 TRANSISTOR (NPN)
FEATURES
z Complementary to S9018
Pa
r
a
m
et
er
Symbolol
Test conditions
Co
llector
-b
ase b
r
eakdo
wn voltage
V
(BR)CB
O
I
C
=100μA, IE=0
30
V
Collector
-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA,I
B
=0 15
V
Emitter-bas
e breakdown voltage
V
(BR)EBO
I
E
=100μA,I
C
=0
5
V
Collector
cut-off current
I
CB
O
V
CB
=12V, IE=0
50
nA
Emitter cut-off current
I
EBO
V
EB
=3V, IC=0
100
nA
DC curren
t gain
h
FE
V
CE
=5V, IC=1mA
70
190
Co
llecto
r
-emitter saturation voltage
V
CE
(sa
t
)
I
C
=10mA, IB=1mA
0.5
V
Bas
e-emitte
r satu
r
atio
n
voltage
V
BE(
sat)
1.4
V
T
ra
n
s
ition
freque
ncy
f
T
800
MHz
Min
Typ
Max Unit
I
C
=10mA, IB=1mA
VCE=5V, IC=5mA m,f=400MHz
Rank
L
H
Range
70-105 105-190
CLASSIFICATION OF h
FE
Collector
cut-off current
I
CEO
V
CE
=12V, IE=0
100
nA
RΘJA
Thermal Resistance From Junction To Ambient 625
℃/W
