The RCLAMP0524P is a 4-channel ultra low capacitance rail
clam ESD protection diodes array . Each channel consists of
a pair of diodes that steer positive or negative ESD current
to either the positive or negative rail . A zener diode is integrated
in to the array between the positive and negative supply rails.
In the typical applications, the negative rail pin (assigned as GND)
is connected with system ground . The Positive ESD current is
steered to the ground through an ESD diode and Zener diode and
the positive ESD voltage is clamped to the zener voltage.
ESD PROTECTION DIODE
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
RCLAMP0524P
Discription
DFN-2510
Circuit Diagram
4 channels of ESD protection;
Provides ESD protection to IEC61000-4-2 level 4
- ±15kV air discharge
- ±8kV contact discharge;
Channel I/O to GND capacitance: 0.5pF (Max)
Channel I/O to I/O capacitance: 0.55pF (Max)
Low clamping voltage;
Low operating voltage;
Improved zener structure;
Optimized package for easy high speed data lines PCB layout;
RoHS compliant and Halogen Free.
Features
Ordering information
Product ID
Pack
Qty(PCS)
DFN-2510
3000
Ordering information
Absolute Ratings (T
amb
=25
°C )
Symbol
Parameter
Value
Units
P
PP
Peak Pulse Power (t
p
= 8/20μs)
150
T
L
Maximum lead temperature for soldering during 10s 260 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
op
Operating Temperature Range -40 to +125 °C
T
j
Maximum junction temperature 150 °C
IEC61000-4-2 (ESD) air discharge
contact discharge
±15
±8
KV
W
I Peak Pulse Current(8/20us)
PP
A4
RCLAMP0524P
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Working Voltage
VRWM
– – 5 V
Any I/O pin to GND
Reverse Breakdown Voltage
VBR
6 – – V
It =1mA;
Any I/O pin to GND
Reverse Leakage Current
IR
– – 1
μA
VRWM =5V, T=25°C;
Any I/O pin to GND
Positive Clamping Voltage
VC1
– 8.5 22 V
IPP=4A, tP=8/20μs;
Positive pulse;
Any I/O pin to GND
Negative Clamping Voltage
VC2
– 1.8 – V
IPP=1A, tP=8/20μs;
Negative pulse;
Any I/O pin to GND
Junction Capacitance
Between Channel
CJ1
– 0.3 0.4
pF
VR=0V, f=1MHz;
Between I/O pins
Junction Capacitance
Between I/O And GND
CJ2
–
0.7
pF
VR=0V, f=1MHz;
Any I/O pin to GND
ELECTRICAL CHARACTERISTICS (Ta= 25℃)
ESD PROTECTION DIODE
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
TYPICAL ELECTRICAL CHARACTERISTICS CURVE
0.55
RCLAMP0524P