D40XB100

Bridge Diodes

1000V, 40A

Feature

・Compact SIP

・UL E142422

・High Current

・High heat dissipation

・Pb free terminal

・RoHS:Yes

OUTLINE

Package (House Name): 5S

Equivalent circuit

Absolute Maximum Ratings (unless otherwise specified : Tc=25℃)

Item Symbol Conditions Ratings Unit

Storage temperrature Tstg -55 to 150 ℃

Junction temperature Tj -55 to 150 ℃

Repetitive peak reverse voltage V 1000 V

Average forward current I (AV)

50Hz, Sine wave, Resistance load, With heatsink,

Tc=85℃

40 A

Average forward current I (AV)

50Hz, Sine wave, Resistance load, On glass-epoxy

substrate, Ta=25℃ ※

3.1 A

Surge forward current I

50Hz, Sine wave, Non-repetitive, 1cycle, Peak

value, Tj=25℃

550 A

Surge forward current I

60Hz, Sine wave, Non-repetitive, 1cycle, Peak

value, Tj=25℃

603 A

Current squared time I t 1ms≦tp＜10ms, Per diode, Tj=25℃ 1512 A s

Dielectric strength Vdis Terminals to case, AC 1minute 2.5 kV

Mounting torque TOR (Recommended torque : 0.5N･m) 0.8 N･m

※︓See the original Specifications

RRM

FSM

² 2

Shindengen Electric Manufacturing Co., Ltd. 1/7 D40XB100_Rev.01(2023.03)

Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item Symbol Conditions

Ratings

Unit

MIN TYP MAX

Forward voltage V IF=20A, Pulse measurement, Per diode 1.05 V

Reverse current I VR=1000V, Pulse measurement, Per diode 10 μA

Reverse recovery time trr IF=0.1A, IR=0.1A, 0.1IR, Per diode 27000 ns

Thermal resistance Rth(j-c) Junction to case, With heatsink 0.8 ℃/W

Thermal resistance Rth(j-l) Junction to lead, On glass-epoxy substrate ※ 5.2 ℃/W

Thermal resistance Rth(j-a) Junction to ambient, On glass-epoxy substrate ※ 25 ℃/W

※︓See the original Specifications

Shindengen Electric Manufacturing Co., Ltd. 2/7 D40XB100_Rev.01(2023.03)