AKG40N013G DATASHEET
©ALKAIDSEMI TECHNOLOGIES 1 / 10 REV.1.1, 2022-11-09
40V 1.3mohm N-channel SGT MOSFET
AKG40N013G
Description:
This N channel SGT MOSFET has been designed to ultra-low on-state resistance (R
DSON
) and yet
maintain superior switching performance, special for high efficiency power management
applications.
Features:
N-channel, optimized for high-speed
smooth switching
Excellent Gate Charge × R
DSON
(FOM)
Ultra-low on-resistance
RoHS compliant
(Note 1)
Halogen-free
(Note 1)
Applications:
DC-DC Conversion
Power tools
Key Performance Parameters:
Parameter
Value
Unit
V
DS
40
V
R
DSON
,
max @VGS = 10 V
1.3
mΩ
I
D
176
A
Ordering Information:
Ordering Code
Package Type
Marking Code
Form
Packing
AKG40N013G
PDFN5X6
AKG40N013G
13 inches Reel
5000 PCS
Notes:
1. Contact ALKAIDSEMI sales for detail information
G
D
S
S
S
D
D
D
1
2
3
4
5
6
7
8
AKG40N013G DATASHEET
©ALKAIDSEMI TECHNOLOGIES 2 / 10 REV.1.1, 2022-11-09
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V
DS
Drain-Source Voltage
40
V
I
D
Drain Current - Continuous (T
C
= 25°C)
176
A
Drain Current -Continuous (T
C
= 100°C)
110
A
I
DM
Drain Current - Pulsed
(Note 1,2)
550
A
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulsed Avalanche Energy
(Note 3)
306
mJ
P
D
Power Dissipation (T
C
= 25°C)
64
W
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
o
C
Thermal Characteristics
Symbol
Parameter
Value
Units
R
θJC
Thermal Resistance, Junction-to-Case，Steady-State
1.94
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient Steady
State
(Note 4)
60
°C/W
Notes:
1. The max drain current rating is package limited
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.5 mH, V
DD
= 15 V, I
AS
=35 A, R
G
= 25 Ω, Starting T
J
= 25 °C
4. Mount on 1 inch X 1 inch 2 oz FR-4 copper PCB
5. Pulse Test: Pulse width ≤ 300 us, Duty cycle ≤ 2%
6. Essentially independent of operating temperature