MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUMRATINGS
RATINGS
RATINGS
RATINGS
CharacteristicSymbolMaxUnit
Drain-SourceVoltage
BV
DSS
-20V
Gate-SourceV oltage
V
GS
+10
V
DrainCurrent(continuous)
I
D
-2.8
A
DrainCurrent(pulsed)
I
DM
-10A
TotalDeviceDissipation
T
A
=25℃
P
D
900mW
Junction
T
J
150℃
StorageTemperature
T
stg
-55to+150℃
SL2301
P-Channel
Power MOSFET
General Features
● V
DS
= -20V,I
D
= -2.8A
R
DS(ON)
< 120mΩ @ V
GS
=-2.5V
R
DS(ON)
< 100mΩ @ V
GS
=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM applications
● Load switch
● Power management
D
G
S
Schematic diagram
Marking and Pin Assignment
SOT-23 top view
1
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ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
(T
A
=25℃unlessotherwisenoted)
PulseWidth<300
μs;DutyCycle<2.0%
CharacteristicSymbolMinTypMaxUnit
Drain-SourceBreakdownV oltage
(I
D
=-250u
A,
V
GS
=0V)
BV
DSS
-20
——
V
GateThresholdV oltage
(I
D
=-250u
A,
V
GS
=V
DS
)
V
GS
(
th
)
-0.5
—-1.5
V
DiodeForwardV oltageDrop
(I
S
=-0.75
A,
V
GS
=0V)
V
SD
—
—-1.5
V
ZeroGateV oltageDrainCurrent
(V
GS
=0
V,
V
DS
=-16V)
(V
GS
=0
V,
V
DS
=-16V,T
A
=55℃)
I
DSS
——-1
-10
uA
GateBodyLeakage
(V
GS
=+10
V,
V
DS
=0V)
I
GSS
——+100
nA
StaticDrain-SourceOn-StateResistance
(I
D
=-2.8
A,
V
GS
=-4.5V)
R
DS
(
ON
)
——100mΩ
StaticDrain-SourceOn-StateResistance
(I
D
=-2
A,
V
GS
=-2.5V)
R
DS
(
ON
)
——120mΩ
InputCapacitance
(V
GS
=0
V,
V
DS
=-10
V,
f=1MHz)
C
ISS
—600—pF
OutputCapacitance
(V
GS
=0
V,
V
DS
=-10
V,
f=1MHz)
C
OSS
—120—pF
Turn-ONTime
(V
DS
=-10
V,
I
D
=-2.8A,R
GEN
=6Ω)
t
(on)
—8—ns
Turn-OFFTime
(V
DS
=-10
V,
I
D
=-2.8A,R
GEN
=6Ω)
t
(off)
—60—ns
SL2301
2
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