eGaN® FET DATASHEET
EPC7001
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2023 | | 1
Applications
• Space applications: DC-DC power, motor drives, lidar,
ion thrusters
• Commercial satellite EPS & avionics
• Deep space probes
• High frequency rad hard DC-DC conversion
• Rad hard motor drives
Features
• Ultra high eciency
• Ultra low R
DS(on)
, Q
G
, Q
GD
, Q
OSS
, and 0 Q
RR
• Ultra small footprint
• Light weight
• Total dose
- Rated > 1 Mrad
• Single event
- SEE immunity for LET of 85 MeV/(mg/cm
2
) with V
DS
up to 100% of rated breakdown
• Neutron
- Maintains pre-rad specication for up to 3 x 10
15
neutrons/cm
2
Benets
• Superior radiation and
electrical performance
vs. rad hard MOSFETs:
smaller, lighter, and
greater radiation hardness
EFFICIENT POWER CONVERSION
HAL
EPC7001 – Rad Hard Power Transistor
V
DS
, 40 V
R
DS(on)
, 4 mΩ max
I
D
, 250 A
95% Pb/5% Sn Solder
G
D
S
Maximum Ratings
PARAMETER VALUE UNIT
V
DS
Drain-to-Source Voltage (Continuous) 40
V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 48
I
D
Continuous 60
A
Pulsed (25°C, T
PULSE
= 300 µs) 250
V
GS
Gate-to-Source Voltage 6
V
Gate-to-Source Voltage -4
T
J
Operating Temperature -55 to 150
°C
T
STG
Storage Temperature -55 to 150
Thermal Characteristics
PARAMETER TYP UNIT
R
θJC
Thermal Resistance, Junction-to-Case 0.8
°C/W R
θJB
Thermal Resistance, Junction-to-Board 1.7
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1) 54
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
All measurements were done with substrate shorted to source.
# Dened by design. Not subject to production test.
Static Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 0.5 mA 40 V
I
DSS
Drain-Source Leakage V
GS
= 0 V, V
DS
= 40 V 1 500 µA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.01 0.7
mAGate-to-Source Forward Leakage
#
V
GS
= 5 V, T
J
= 125°C 0.2 3
Gate-to-Source Reverse Leakage V
GS
= -4 V 0.001 0.7
V
GS(TH)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 8 mA 0.8 1.4 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 30 A 2.1 4.0 mΩ
V
SD
Source-Drain Forward Voltage
#
I
S
= 0.5 A, V
GS
= 0 V 1.7 V
Rad Hard eGaN® transistors have been specically designed for critical applications in the high
reliability or commercial satellite space environments. GaN transistors oer superior reliability
performance in a space environment because there are no minority carriers for single event, and as
a wide band semiconductor there is less displacement for protons and neutrons, and additionally
there is no oxide to breakdown. These devices have exceptionally high electron mobility and a low
temperature coecient resulting in very low R
DS(on)
values. The lateral structure of the die provides
for very low gate charge (Q
G
) and extremely fast switching times. These features enable faster power
supply switching frequencies resulting in higher power densities, higher eciencies and more
compact designs.
EPC7001 eGaN® FETs
are supplied only in
passivated die form
with solder bars
Die Size: 4.1 x 1.6 mm
Preliminary
eGaN® FET DATASHEET
EPC7001
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2023 | | 2
250
200
150
100
50
0
10
8
6
4
2
0
10
8
6
4
2
0
1.0 1.5 2.0 2.5 3.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 1: Typical Output Characteristics at 25°C
Figure 2: Typical Transfer Characteristics
0 0.5
I
D
= 15 A
= 30 A
= 45 A
= 60 A
I
D
I
D
I
D
V
DS
= 3 V
25°C
125°C
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
250
200
150
100
50
0
V
DS
– Drain-to-Source Voltage (V)
2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
Figure 3: R
DS(on)
vs. V
GS
for Various Drain Currents Figure 4: R
DS(on)
vs. V
GS
for Various Temperatures
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
25˚C
125˚C
I
D
= 30 A
Dynamic Characteristics
#
(T
J
= 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
C
ISS
Input Capacitance
V
DS
= 20 V, V
GS
= 0 V
1342
pF
C
RSS
Reverse Transfer Capacitance
14
C
OSS
Output Capacitance
792
C
OSS(ER)
Eective Output Capacitance, Energy Related (Note 2)
V
DS
= 0 to 20 V, V
GS
= 0 V
1088
C
OSS(TR)
Eective Output Capacitance, Time Related (Note 3)
1302
Q
G
Total Gate Charge
V
DS
= 20 V, V
GS
= 5 V, I
D
= 30 A 11
nC
Q
GS
Gate-to-Source Charge
V
DS
= 20 V, I
D
= 30 A
3.6
Q
GD
Gate-to-Drain Charge
1.7
Q
G(TH)
Gate Charge at Threshold
2.6
Q
OSS
Output Charge
V
DS
= 20 V, V
GS
= 0 V 26
Q
RR
Source-Drain Recovery Charge
0
All measurements were done with substrate connected to source.
# Dened by design. Not subject to production test.
Note 2: C
OSS(ER)
is a xed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
Note 3: C
OSS(TR)
is a xed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.