Surface mount package ideally suited
for automatic insertion.
Sourced from process GE.
T
ype No. Marking Package Code
MMBD701 5HF SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic Symbol Limits Unit
DC Reverse Voltage
V
R
70 V
Working inverse Voltage
W
iv
35 V
Power Dissipation
P
d
200 mW
Operating Junction Temperature
T
j
-55 to+125 ℃
Storage Temperature
T
STG
-55 to +150 ℃
ELECTRICAL
CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Characteristic Symbol Min. TYP
. MAX UNIT Test Condition
Reverse Breakdown Voltage V
(BR)R
70 V I
R
=10μA
Forward Voltage V
F
500
1000
mV
I
F
=1.0mA
I
F
=10mA
Reverse Current I
R
200 nA V
R
=35V
Diode Capacitance C
D
1.0 pF V
R
=20V,f=1.0MHz
MMBD701
Schottky Barrier Diodes
îš—
îš—
Dimensions in inches and (millimeters)
SOT-23
Features
Applications
Ordering Information
http://ww
w.lgesemi.com
ma
il:lge@lgesemi.com
Revision:20170701-P1
ELECTRICAL CHARACTERISTICS CURVES
FIG. 1-
Typical Reverse Leakage
FIG. 2-
Typical Forward Voltage
FIG. 3 TYPICAL TOTAL CAPACITANCE
0.01
0.1
1
10
100
0 20406080
Re ve r se V olt age , V
R
(V)
Reverse Leakage, I
R
(uA)
T
J
=75
o
C
T
J
=125
o
C
T
J
=25
o
C
0.1
1
10
100
0 0 .2 0 .4 0 .6 0 .8 1
Forward Voltage, V
F
(V)
Forward Current, I
F
(mA)
T
J
=75
o
C
T
J
=25
o
C
T
J
= 125
o
C
T
J
=-25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 102030405060
V
R
, Reverse Voltage (V)
Total Capacitance, C
T
(pF)
MMBD701
Schottky Barrier Diodes
http://ww
w.lgesemi.com
ma
il:lge@lgesemi.com
Revision:20170701-P1
PACKAGE SPQ/PCS
CARTON
SPQ/PCS
CARTON
SIZE/CM
CARTON
GW/KG
CARTON
NW/KG
SOT- 23
3000/REEL 90000 40X20X22 5.00 4.00