Very low capacitance—
Less than 1.0pF@zero V.
Low forward voltage—I
F
=10mA.
MMBD352 MMBD353
Power dissipation P
d
=300mW
Pb/RoHS Free
MMBD354
MMBD355
Designed primarily for UHF mixer
applications.
T
ype No. Marking Package Code
MMBD352 M5G SOT-23
MMBD353 M4F SOT-23
MMBD354 M6H SOT-23
MMBD355 MJ1 SOT-23
MAXIMUM RATING
@ Ta=25 ℃ unless otherwise specified
Parameter Symbol Limits Unit
Continuous reverse voltage
V
R
7.0 V
Power Dissipation
P
d
300 mW
Thermal Resistance,Junction-to-Ambient
R
θJA
417 ℃/W
Junction and storage temperature
T
J
,T
STG
-55-150 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25 ℃ unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Breakdown Voltage V
(BR)
7.0 V I
R
=100μA
Forward voltage V
F
0.60 V I
F
=10mA
Reverse current I
R
0.25
10
μA
V
R
=3.0V
V
R
=7.0V
Diode Capacitanc C
D
1.0 pF V
R
=0V,f=1MHz
MMBD352-355
Dual Hot Carrier Mixer Diodes
Features
Applications
Ordering Information
Dimensions in inches and (millimeters)
SOT-23
http://ww
w.lgesemi.com
ma
il:lge@lgesemi.com
Revision:20170701-P1
