Two element incorporated
into one package.
(Emitter-coupled transistors)
MMBD1501A MMBD1503A
Reduction of the mounting area and
assembly cost by one half.
MMBD1504A MMBD1505A
For general application.
Type No. Marking Package Code
MMBD1501A A11
SOT-23
MMBD1503A A13 SOT-23
MMBD1504A A14 SOT-23
MMBD1505A A15 SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Reverse Voltage V
R
200 V
Average rectified current V
F(AV)
200 mA
Forward Continuous Current I
FM
600 mA
Peak forward current (1.0s)
(1.0m)
I
FSM
1.0
2.0
A
Power Dissipation P
d
350 mW
Thermal resistance,Junction to ambient R
θJA
357
℃/W
Storage temperature T
STG
-55-150
℃
MMBD1501A/1503A/1504A/1505A
High Conductance Low Leakage Diode
Features
Applications
Ordering Information
Dimensions in inches and (millimeters)
SOT-23
http://ww
w.lgesemi.com
ma
il:lge@lgesemi.com
Revision:20170701-P1
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter S
ymbol Min. Max. Unit Test Conditions
Reverse Breakdown Voltage
V
(BR)R1
200 V I
R
=5μA
Forward voltage
V
F
0.62
0.72
0.8
0.83
0.87
0.9
0.72
0.83
0.89
0.93
1.1
1.15
V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=100mA
I
F
=200mA
I
F
=300mA
Reverse current
I
R
1.0
10
nA
V
R
=125V
V
R
=180V
Diode Capacitance
C
D
4 pF V
R
=0V,f=1MHz
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
MMBD1501A/1503A/1504A/1505A
High Conductance Low Leakage Diode
http://ww
w.lgesemi.com
ma
il:lge@lgesemi.com
Revision:20170701-P1