Silicon N-Channel Power MOSFET
10N60F
FEATURES
Fast Switching
ESD Improved Capability
ow Gate Charge (Typical Data:38nC)
Low Reverse transfer capacitances(Typical:15pF)
100% Single Pulse avalanche energy Test
APPLICATIONS
Power switch circuit of adaptor and charger. ITO-220AB
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
DSS
Drain-to-Source voltage 600 V
V
GS
Gate -Source voltage ±30 V
I
D
Continuous Drain current
Continuous Drain current Tc=100°C
10
6.4
A
I
DM
a1
Pulsed Drain current 40 A
dv/dt
a3
Peak Diode Recovery dv/dt 5.0 V/ns
P
D
Power Dissipation 50 W
V
ESD(G-S)
Gate source ESD(HBM-C=100pF,R=1.5kΩ) 4000 V
T
J
,T
stg
Operating Junction and StorageTemperature
150，-55 to +150
℃
T
L
Maximum Temperature for Soldering 300
℃
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i.com
mail:lge@lgesemi.com
Revision:20170701-P1
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
OFF Characteristics
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V
DSS
V
GS
=0V,I
D
=250μA 600 - - V
Bvdss Temperature Coefficient ∆BV
DSS
/∆T
J
ID=250uA,Reference25℃
- 0.74
- V/℃
Drain to Source Leakage Current I
DSS
V
DS
=600V, V
GS
=0V
- -
25 uA
Gate to Sourse Forward Leakage I
GSS(F)
V
GS
=30V - - 10
uA
Gate to Sourse ReverseLeakage I
GSS (R)
V
GS
=-30V - - -10 μA
ON Characte
ristics
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-to-Source On-Resistance R
DS(ON)
V
GS
=10V, I
D
=3mA - 0.65 0.75 Ω
Gate Threshold Voltage V
GS (TH)
V
DS
= V
GS
, I
D
= 250μA 2.0 - 4.0 V
Dynamic Charact
eristics
Parameter Symbol Test conditions MIN TYP MAX UNIT
Forward Transconductance gfs
V
DS
=15V, I
D
=5.0A
- 11 - S
Input Capacitance Ciss
V
GS
=0V,
V
DS
=25V,f=1.0MHz
- 1758 -
pF
Output Capacitance
Coss - 153 -
Reserse Transfer Capacitance Crss - 15 -
Resistive Swit
ching Characteristics
Parameter Symbol Test conditions MIN TYP MAX UNIT
Turn-on Delay Time t
d(ON)
I
D
=10.0A,V
DD
=300
V, V
GS
=10V,
R
G
=4.7Ω
- 20 -
ns
Rose Time tr - 20 -
Turn-Off Delay Time
t
d(OFF)
- 55 -
Fall Time tf - 30 -
10N60F
http://www.lgesem
i.com
mail:lge@lgesemi.com
Revision:20170701-P1