BLQG3040 www.belling.com.cn
Rev 1.1 Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
2/2023 ©2011 Belling All Rights Reserved
BLQG3040
IGBT
Step-Down Converter
,
1．Description
BLQG3040 is obtained by advanced ignition
IGBTs technology which reduce the conduction loss,
enhance the SCIS capability. Internally integrated
diodes can provide the voltage clamping without the
need for external components. The IGBT is suitable
device for automotive ignition circuits, specifically as a
coil driver.
KEY CHARACTERISTICS
Parameter
Value
Unit
V
CES
400
V
V
CE(sat).Typ
1.1
V
E
SCIS
@T
J
=25 °C
300
mJ
ESD
4
kV
FEATURES
Low V
CEsat
High SCIS Energy
Logic Level Gate Drive
AEC-Q101 Qualified
APPLICATIONS
Automotive ignition Coil Driver Circuits
Coil-On Plug Application
ORDERING INFORMATION
Ordering Codes
Product Code
Package
Device Marking
Packing
BLQG3040-D
BLQG3040
TO-252
QG3040
Reel
BLQG3040-B
TO-263
Reel
BLQG3040-D
(1) BLQG3040: 400V 300mJ
(2) D:TO-252 B：TO-263
XXXX：Device Marking
XXXX YYWW：Year & Week
YYWW ZZ
SSSSS ZZ：Assembly Code
SSSSS：Lot Code
(2) Package type
(1) Chip name
BLQG3040 www.belling.com.cn
Rev 1.1 Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited
2/2023 ©2011 Belling All Rights Reserved
BLQG3040
IGBT
Step-Down Converter
,
2．ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol
Parameter
Rating
Units
V
CES
Collector-Emitter Voltage
BV
CER
V
V
ECS
Emitter to Collector Voltage（I
C
=10mA）
24
V
E
SCIS
SCIS Energy@ T
J
=25 °C ，I
SCIS
=14.2A
300
mJ
SCIS Energy@ T
J
=150 °C ，I
SCIS
=10.6A
170
mJ
I
C
Collector Current @T
C
=25 °C
21
A
Collector Current @T
C
=100 °C
17
A
ESD
Electrostatic Discharge Voltage (HBM) at 100pF,1500Ω
4
kV
V
GEM
Gate- Emitter Voltage Continuous
±10
V
P
D
Power Dissipation @TC = 25 °C
150
W
T
J
，T
stg
Operating Junction and Storage Temperature Range
-40 to 175
°C
T
L
Maximum Temperature for Soldering
260
°C
3．Thermal characteristics
Symbol
Parameter
Package
RATINGS
Units
R
θJC
Junction-to-Case
TO-252/TO-263
1.0
°C /W
4．Electrical Characteristics
at T
C
= 25°C, unless otherwise specified
OFF Characteristics
Symbol
Parameter
Test Conditions
Values
Units
Min.
Typ.
Max.
BV
CER
Collector to Emitter
Breakdown Voltage
V
GE
=0V, I
C
=2mA, R
G
=1kΩ
370
400
430
V
BV
CES
Collector to Emitter
Breakdown Voltage
V
GE
=0V, I
C
=10mA, R
G
=0Ω
390
410
450
V
BV
ECS
Emitter to Collector
Breakdown Voltage
V
GE
=0V, I
C
=-75mA
30
--
--
V
BV
GES
Gate to Emitter
Breakdown Voltage
I
GES
=±2mA
±12
±14
V
I
CER
Collector to Emitter
Leakage Current
V
CE
=250V, R
G
=1kΩ, T
J
=25°C
--
--
25
µA
V
CE
=250V, R
G
=1kΩ, T
J
=150°C
--
--
1
mA