GBU806 THRU GBU810
- 1 -
GBU806 THRU GBU810
SINGLE PHASE8.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURE
.UL Listed Under Recognized Component Index,
File Number E338195
.Glass passivated chip junctions
.High case dielectric stength
.Low Reverse Leakage Current
.High surge current capability
.Ideal for Printed Circuit Board Applications
MECHANICAL DATA
.Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
.Terminals: Pure tin plated, Lead free.
Leads solderable per MIL-STD-750, Method 2026.
.Polarity: Molded on Body
.Mounting: Through Hole for #6 Screw
.Mounting Torque: 5.0 in-lbs Maximum
GBU
SPACING
.130(3.2)
45°
Chamfer
~
~
+
-
.906(23.0)
.827(21.0)
.138(3.5)
.130(3.3)
.098(2.5)
.091(2.3)
.024(0.6)
.020(0.5)
.748(19.0)
.709(18.0)
.087(2.2)
.071(1.8)
.748(19.0)
.669(17.0)
.210(5.3)
.190(4.8)
.087(2.2)
.071(1.8)
.098(2.5)
.087(2.2)
.150(3.8)
.137(3.5)
.049(1.25)
.045(1.15)
.228(5.8)
.213(5.4)
-
+
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%
Type Number
SYM
BOL
GBU806
GBU808
GBU810
units
Maximum Recurrent Peak Reverse Voltage
V
RRM
600
800
1000
V
Maximum RMS Voltage
V
RMS
420
560
700
V
Maximum DC blocking Voltage
V
DC
600
800
1000
V
Maximum Average Forward (with heatsink Note2)
Rectified Current @ T
C
=100°C(without heatsink)
I
F(AV)
8.0
2.8
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
I
FSM
200
A
Maximum Forward Voltage @ 8.0A DC
Drop per element @ 4.0A DC
V
F
1.1
1.0
V
Maximum DC Reverse Current @T
J
=25°C
at rated DC blocking voltage @T
J
=125°C
I
R
5.0
500.0
μA
I
2
t Rating for Fusing (t﹤8.3ms)
I
2
t
166
A
2
Sec
Typical Junction Capacitance (Note 1)
C
J
60
pF
Typical Thermal Resistance (Note 2)
R
(JC)
2.2
°C/W
Storage Temperature
T
STG
-55 to +150
°C
Operating Junction Temperature
T
J
-55 to +150
°C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
GBU806 THRU GBU810
- 2 -
RATING AND CHARACTERISTIC CURVES
100
FIG.3-M A X IM UN NON -REPET ITIV E
FO R W A RD SU RGE CURRENT
150
PEAK FORWARD SURGE
CURRENT,(A)
1
0
50
100
10
NUM BER OF CY C LES A T 60Hz
AVERGE FORWARD
RECTIFIED CURRENT,(A)
Single Phase Half W ave 60Hz
Resistive or inductive Load
150
200
0
0
4.0
CA SE TEM PERTU R E,(℃ )
8.3m s S ingle H alf
Sine-W ave (JE D EC
M ethod)
25
75
125
FIG.1-TYPICA L FOR W A RD CUR REN T
DER A T ING CU R V E
8.0
INSTANEOUS REVERSE CURRENT,(μA)
PERCEN T O F R A TED PE A K REV ERSE VOLTAGE,(%)
40
20
0
60
0.1
1.0
120
100
80
TJ=25���
INSTANEOUS FORWARD
CURRENT,(A)
FIG.5-TY PICA L R EV ER SE C HA RACTERISTICS
IN STAN EOU S FORW A RD VOLTAG E,(V)
100
10
.01
.4
0.1
0.6
TJ= 25℃ Pulse
W idth=300μ s 1%
Duty C ycle
0.8
1.0
1.2
FIG.2-TYPICA L IN ST A N TA N EOUS FO RW ARD
CH A RA C TER ISTICS
1.0
10
W ith H eatsink
W ithout Heatsink
1000
TJ= 100℃
TJ=125℃
TJ=150℃
FIG.4-TYPIAL JU N C TION CAPAOTANCE
JUNCTION CAPACITANCE,(pF)
RE V ERSE V OLTAGE,(V)
1
10
100
1000
1
10
100
2.0
6.0
4
50
100