LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D
Version 1.2,Apr-2020
1
www.lonten.cc
Lonten N-channel 650V, 7A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced planar VDMOS technology. The
resulting device has low conduction resistance,
superior switching performance and high avalance
energy.
Features
Low R
DS(on)
Low gate charge (typ. Q
g
=20.7nC)
100% UIS tested
RoHS compliant
Applications
Power faction correction.
Switched mode power supplies.
LED driver.
Product Summary
V
DSS
650V
I
D
7A
R
DS(on),max
1.4Ω
Q
g,typ
20.7nC
TO-251 TO-252 TO-220 TO-220F
TO-262
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
650
V
Continuous drain current ( T
C
= 25°C )
( T
C
= 100°C )
I
D
7
4.3
A
A
Pulsed drain current
1)
I
DM
28
A
Gate-Source voltage
V
GSS
±30
V
Avalanche energy, single pulse
2)
E
AS
352
mJ
Peak diode recovery dv/dt
3)
dv/dt
5
V/ns
Power Dissipation TO-220F ( T
C
= 25°C )
Derate above 25°C
P
D
39
0.31
W
W/°C
Power Dissipation
TO-220\ TO-251\ TO-252\TO-262 ( T
C
= 25°C )
Derate above 25°C
100
0.8
W
W/°C
Operating juncition and storage temperature range
T
J
, T
STG
-55 to +150
°C
Continuous diode forward current
I
S
7
A
Diode pulse current
I
S,pulse
28
A
Thermal Characteristics
Parameter
Symbol
Value
Unit
TO-220
Thermal resistance, Junction-to-case
R
θJC
1.25
°C/W
Thermal resistance, Junction-to-ambient
R
θJA
110
°C/W
S
D
G
Pb
LNC7N65D\LND7N65D\LNG7N65D\LNH7N65D\ LNF7N65D
Version 1.2,Apr-2020
2
www.lonten.cc
Package Marking and Ordering Information
Device
Device Package
Marking
LNC7N65D
TO-220
LNC7N65D
LND7N65D
TO-220F
LND7N65D
LNG7N65D
TO-252
LNG7N65D
LNH7N65D
TO-251
LNH7N65D
LNF7N65D
TO-262
LNF7N65D
Electrical Characteristics T
c
= 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static characteristics
Drain-source breakdown voltage
BV
DSS
V
GS
=0 V, I
D
=250 uA
650
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250 uA
2
-
4
V
Drain cut-off current
I
DSS
V
DS
=650 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
-
-
-
1
100
μA
Gate leakage current, Forward
I
GSSF
V
GS
=30 V, V
DS
=0 V
-
-
100
nA
Gate leakage current, Reverse
I
GSSR
V
GS
=-30 V, V
DS
=0 V
-
-
-100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=3.5 A
-
1.2
1.4
Ω
Dynamic characteristics
Input capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
1090
-
pF
Output capacitance
C
oss
-
111
-
Reverse transfer capacitance
C
rss
-
6.1
-
Turn-on delay time
t
d(on)
V
DD
= 325 V, I
D
= 7 A
R
G
= 10 Ω, V
GS
=15 V
-
12.2
-
ns
Rise time
t
r
-
33.4
-
Turn-off delay time
t
d(off)
-
53.6
-
Fall time
t
f
-
15
-
Gate charge characteristics
Gate to source charge
Q
gs
V
DD
=520 V, I
D
=7 A,
V
GS
=0 to 10 V
-
5.7
-
nC
Gate to drain charge
Q
gd
-
7.2
-
Gate charge total
Q
g
-
20.7
-
Gate plateau voltage
V
plateau
-
5
-
V
Reverse diode characteristics
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=7 A
-
0.85
1.5
V
Reverse recovery time
t
rr
V
R
=325 V, I
F
=7 A,
dI
F
/dt=100 A/μs
-
373.2
-
ns
Reverse recovery charge
Q
rr
-
2.1
-
μC
Peak reverse recovery current
I
rrm
-
15.7
-
A
Notes:
1. Pulse width limited by maximum junction temperature.
2. L=10mH, I
AS
= 8.4A, Starting T
j
= 25°C.
3. I
SD
= 7A, di/dt≤100A/us, V
DD
≤BV
DS
, Starting T
j
= 25°C.