Features:
Value Unit
40 V
0.8 mΩ
320 A
Notes:
Applications:
• Battery Management System
• DC-DC Converter
• Motor Drivers
AKG4N008GM
DATASHEET
40V 0.8mohm N-channel SGT MOSFET
AKG4N008GM
Description:
This N channel SGT MOSFET has been designed to low on-state resistance low
switching loss with good EAS performance, especially for DC-DC and Motor driving
applications.
Parameter
V
DS
R
DSON
,
max
@V
GS
= 10V
I
D
• Low R
DS(ON)
• 100% UIS Tested
• RoHS compliant
(Note 1)
• Halogen-free
(Note 1)
Key Performance Parameters:
Ordering Information:
Ordering Code
AKG4N008GM
1.Contact ALKAIDSEMI sales for detail information
Packing
5000PCS
Form
Tape Reel
Marking Code
G4N008GM
Package Type
PDFN5X6
G
D
S
S
S
D
D
D
1
2
3
4
5
6
7
8
©ALKAIDSEMI TECHNOLOGIES
1/10 Rev.1.1 2022-10-28
Symbol Units
V
DS
V
A
A
I
DM
A
V
GS
V
E
AS
mJ
P
D
W
T
J,
T
STG
°C
Thermal Characteristics
Symbol Units
R
θJC
°C/W
R
θJA
°C/W
Notes:
1.The max drain current rating is silicon limited
2.Repetitive Rating: Pulse width limited by maximum junction temperature
3.L = 0.5 mH, V
DD
= 20 V, I
AS
= 60 A, R
G
= 25 Ω, Starting T
J
= 25 °C
Operating and Storage Temperature Range
Parameter Value
Thermal Resistance, Junction-to-Case, Steady-State 0.9
AKG4N008GM
DATASHEET
Maximum Ratings (T
A
= 25°C unless otherwise noted)
I
D
138
-55 to +150
4.Mount on minimum PCB layout
45
Parameter
Drain-Source Voltage
Drain Current - Continuous (T
C
= 25°C)
(Note 1)
Drain Current - Continuous (T
C
= 100°C)
Thermal Resistance, Junction-to-Ambient, Steady State
(Note 4)
Value
40
320
200
900
± 20
900
Drain Current - Pulsed
(Note 2)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 3)
Power Dissipation (T
C
= 25°C)
©ALKAIDSEMI TECHNOLOGIES
2/10 Rev.1.1 2022-10-28