P. 2
© ROHM Co., Ltd.
2022. Sep
65UG039E Rev.001
ROHM Solution Simulator Schematic Information
HB2637L-EVK-301_DPT_HS
ROHM Solution Simulator Schematic Information
Figure 1. HB2637L-EVK-301
This simulation circuit provides the double pulse test simulation environment of HB2637L-EVK-301,
ROHM’s 4th Generation SiC MOSFET Half Bridge Evaluation Board“. The simulation circuit is
composed of the detailed simulation model with the circuit board parasitic inductance to achieve
higher switching waveform simulation accuracy.
Features
• Double pulse test circuit (High-side switching)
• 4th generation SiC MOSFET SCT4036KW7 + gate driver IC BM61S41RFV-C.
• Device equivalent circuit model of the components are used for simulation accuracy.
• Parasitic inductance of PCB patterns are modelled and applied to the simulation circuit.
• Vgs, VDC and other constants can be modified.
• Approx. simulation elapsed time is 6 min.
Applications
• By simulating and verifying the operating conditions and circuit constants of drive circuits, etc., the
workload of hardware evaluation can be reduced.
• By extracting the parasitic inductance of the pattern from the PCB layout and adding it to the
circuit for simulation, it is possible to improve the problem before prototyping.
• Simulation with the EVK detailed model may help to analyze the cause of noise or surge served in
the hardware evaluation.
Double Pulse Test Simulation with HB2637L-EVK-301 Simulation Model
<Outlines>
Note) For more details of HB2637L-EVK-301, please refer to the following documents.
HB2637L-EVK-301_ug-e.pdf