VS-STPS30L60CWPbF, VS-STPS30L60CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
1
Document Number: 94329
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
�� High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-STPS30L60CW... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 15 A
V
R
60 V
V
F
at I
F
0.56 V
I
RM
max. 100 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
13 mJ
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 30 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 1020 A
V
F
15 Apk, T
J
= 125 °C (per leg) 0.56 V
T
J
- 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS30L60CWPbF VS-STPS30L60CW-N3 UNITS
Maximum DC reverse voltage V
R
60 60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 112 °C, rectangular waveform 30
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1020
10 ms sine or 6 ms rect. pulse 265
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1.50 A, L = 11.5 mH 13 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.50 A
VS-STPS30L60CWPbF, VS-STPS30L60CW-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94329
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.60
V
30 A 0.80
15 A
T
J
= 125 °C
0.56
30 A 0.70
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.48
mA
T
J
= 125 °C
50 (typical)
100
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 720 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
2.20
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.10
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.24
Approximate weight
6g
0.21 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) STPS30L60CW