ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
MCR100-6
MCR100-6
FEATURES
TO-92
3
2
1
TO-92
1000/Bag
MCR100-6/8
Plastic-Encapsulate Thyristors
MCR100-8
MCR100-8
TO-92
1000/Bag
a
T =25
Я
unless otherwise specified
) *
Symbol value unit
I
T(RMS)
0.8 A
MCR100-6 400
V
DRM
/V
RRM
MCR100-8 600
V
Tj
Junction Temperature -40 ~ 125
Я
T
stg
Storage Temperature -55 ~ 150
Я
1.KATHODE
2.GATE
3.ANODE
z
z
z
Parame
Blocking voltage to 400 V/600V (MCR100-6/MCR100--8)
RMS on-state current to 0.8 A
General purpose switching
ter Symbol Test conditions Min Max Unit
On state voltage *
V
TM
I
TM
=1A 1.7 V
Gate trigger voltage
V
GT
V
AK
=7V 0.8 V
Peak Re
petitive forward and reverse
blocking voltage MCR100-6
MCR100-8
V
DRM
/
V
RRM
I
DRM
/
IRRM
= 10 ΚA 400
600
V
Peak forward or reverse blocking
Current
I
DRM
I
RRM
V
AK
= Rated
V
DRM
or V
RRM
10 μA
Holding current
I
H
I
HL
=20mA ,V
AK
=7V 5 mA
A2 5 15 μA
A1 15 30 μA
A 30 80 μA
Gate trigger current
I
GT
B
V
AK
=7V
80 200 μA
* Forward current applied for 1 ms maximum durationˈduty cycle۷1%DŽ
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
MCR100-6/8
Plastic-Encapsulate Thyristors
25 50 75 100 125
0
100
200
300
400
25 50 75 100 125
0.2
0.3
0.4
0.5
0.6
0.7
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
1
2
3
4
5
6
7
25 50 75 100 125
0
10
20
30
40
50
AMBIENT TEMPERATURE T
a
( )
℃
Pulsed
I
T
=20mA
、
I
G
=50mA
HOLDING CURRENT I
H
(uA)
T
a
I
H
——
Pulsed
V
AK
=7V
GATE TRIGGER VOLTAGE
V
GT
(V)
AMBIENT TEMPERATURE T
a
( )
℃
T
a
V
GT
——
Pulsed
I
G
=50mA
T
a
=25
℃
T
a
=100
o
C
ON-STATE VOLTAGE
V
TM
(V)
ON-STATE CURRENT I
T
(A)
V
TM
I
T
——
Pulsed
V
AK
=7V
GATE TRIGGER CURRENT I
GT
(uA)
AMBIENT TEMPERATURE T
a
( )
℃
T
a
I
GT
——
Typical Characteristics