z

Collector Current: I

C

=1.5A

SS8050

ELECTRONICS CO.,LTD

HUAXUANYANG HXY

NPN Plastic-Encapsulate Transistors

SOT-23

www.hxymos.com

Shenzhen HuaXuanYang Electronics CO.,LTD

Power Dissipation of 300mw

C

B

E

E

B

C

z

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

Y1

SOT-23SS8050

3000

FEATURES

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Parameter Symbol Limit Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Jun

ction Temperature

Storage Temperature

V

CBO

V

CE

O

V

EBO

I

C

P

C

R

ΘJA

T

j

T

stg

40

25

5

1.5

300

417

150

-55～+150

V

V

V

℃/W

℃

℃

A

mW

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

V

(BR)CBO

I

C

= 100μA, I

E

=0 40 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

= 0.1mA, I

B

=0 25 V

Emitter-base breakdow n voltage

V

(BR)EBO

I

E

=100μA, I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=40V, I

E

=0 0.1 μA

Collector cut-off current

I

CEO

V

CE

=20V, I

E

=0 0.1 μA

Emitter cut-off current

I

EBO

V

EB

= 5V, I

C

=0 0.1 μA

h

FE(1)

V

CE

=1V, I

C

= 100mA 120 400

DC current gain

h

FE(2)

V

CE

=1V, I

C

= 800mA 40

Collector-emitter saturation voltage

V

CE(sat)

I

C

=800mA, I

B

= 80mA 0.5 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=800mA, I

B

= 80mA 1.2 V

Transition frequency

f

T

V

CE

=10V, I

C

= 50mA,

f=30MHz

100 MHz

Collector output capacitance

C

ob

V

CB

=10V,I

E

=0,f=1MHz 15 pF

SS8050

ELECTRONICS CO.,LTD

HUAXUANYANG HXY

NPN Plastic-Encapsulate Transistors

www.hxymos.com

Shenzhen HuaXuanYang Electronics CO.,LTD

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

℃

Typical Characteristics