Document Number: 94313 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 3.0 A
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
3.0 A
V
R
20 V, 30 V, 40 V
V
F
at I
F
0.49 V
I
RM
20 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
8 mJ
Anode
1
3
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 3.0 A
V
RRM
20 to 40 V
I
FSM
t
p
= 5 μs sine 490 A
V
F
3 Apk, T
J
= 125 °C 0.49 V
T
J
- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD320PbF VS-MBRD330PbF VS-MBRD340PbF UNITS
Maximum DC reverse voltage V
R
20 30 40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 133 °C, rectangular waveform 3.0
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
490
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 16 mH 8.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94313
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.48 0.6
V
6 A 0.58 0.7
3 A
T
J
= 125 °C
0.41 0.49
6 A 0.55 0.625
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.02 0.2
mA
T
J
= 125 °C 10.7 20
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 189 - pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 5.0 - nH
Maximum voltage rate of change dV/dt Rated V
R
- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
(1)
- 40 to 150
°C
Maximum storage temperature range T
Stg
- 40 to 175
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
6.0
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
80
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA)
MBRD320
MBRD330
MBRD340
dP
tot
dT
J
-------------
1
R
thJA
--------------<