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Semiconductor CompianceSemiconductor Compiance

1. BASE

2. EMITTER

3. C

OLLECTOR

S9014W

TR

ANSISTOR (NPN)

FEATURES

 Complementary to S9015W

 Small Surface Mount Package

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage 50 V

V

CEO

Collector-Emitter Voltage 45 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 100 mA

P

C

Collector Power Dissipation 200 mW

R

ΘJA

Thermal Resistance From Junction To Ambient 625

℃/W

Operation Junction and

Storage Temperature Range

℃

T

J

,T

stg

-55～+150

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

V

(BR)CBO

I

C

=100µA, I

E

=0 50 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

=100µA, I

B

=0 45 V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=100µA, I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=50V, I

E

=0 100 nA

Collector cut-off current

I

CEO

V

CE

=35V, I

B

=0 1 uA

Emitter cut-off current

I

EBO

V

EB

=4V, I

C

=0 100 nA

DC current gain

h

FE

V

CE

=5V, I

C

=1mA 200 1000

Collector-emitter saturation voltage

V

CE(sat)

I

C

=100mA, I

B

=5mA 0.3 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=100mA, I

B

=5mA 1 V

Base-emitter voltage

V

BE

V

CE

=5V, I

C

=2mA 0.58 0.7 V

Transition frequency

f

T

V

CE

=5V,I

C

=10mA , f=30MHz 150 MHz

Collector output capacitance

C

ob

V

CB

=10V, I

E

=0, f=1MHz 3.5 pF

CLASSIFICATION OF h

FE

RANK L H

RANGE 200–450 450–1000

MARKING

J6

SOT-323

S9014W