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Semiconductor CompianceSemiconductor Compiance

SOT-323

1. BASE

2. EMITTER

3. C

OLLECTOR

SS8050W

TRANSISTOR (NPN)

ELECTRICAL CHARACTERISTICS (Ta=25℃

FEATURES

Complimentary to SS8550W

MARKING: Y1

unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakd own voltage

V

(BR)CBO

I

C

= 100μA, I

E

=0 40 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

= 0.1mA, I

B

=0 25 V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=100μA, I

C

=0 5 V

Collector cut-off current

I

CBO

V

CB

=40V, I

E

=0 0.1 μA

Collector cut-off current

I

CEO

V

CE

=20V, I

E

=0 0.1 μA

Emitter cut-off current

I

EBO

V

EB

= 5V, I

C

=0 0.1 μA

h

FE(1)

V

CE

=1V, I

C

= 100mA 120 400

DC current gain

h

FE(2)

V

CE

=1V, I

C

= 800mA 40

Collector-emitter saturation voltage

V

CE(sat)

I

C

=800mA, I

B

= 80mA 0.5 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=800mA, I

B

= 80mA 1.2 V

Transition frequency

f

T

V

CE

=10V, I

C

= 50mA,

f=30MHz

100 MHz

Collector output capacitance

C

ob

V

CB

=10V,I

E

=0,f=1MHz 15 pF

CLASSIFICATION OF h

FE

(1)

Rank L H J

Range

120-200 200-350 300-400

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage 40

V

V

CEO

Collector-Emitter Voltage 25

V

V

EBO

Emitter-Base Voltage 5

V

I

C

Collector Current 1.5 A

P

C

Collector Power Dissipation 250 mW

R

ΘJA

Thermal Resistance From Junction To Ambient

500 ℃/W

Operation Junction and

Storage Temperature Range

T

J

,T

stg

-55～+150 ℃

SS8050W