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Semiconductor CompianceSemiconductor Compiance
www.msksemi.com
SOD-323
FEATURES
z
Lo
w
F
o
r
w
a
r
d V
o
lt
age Drop
z
Guard Ring Construction for Transient Protection
z
Negligible Reverse Recovery Time
z
Low Reverse Capacitance
MARKING:
SD103BWS:S5
SD103CWS:S6
S4
SD103AWS:S4
S5
S6
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter Symbol SD103AWS SD103BWS SD103CWS Un
it
Peak Repetitive Peak Reverse
Voltag e
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 30 20 V
RMS Reverse Voltage V
R(RMS)
28 21 14 V
Forward Continuous Current I
FM
350 mA
1RQUepetitive Peak Forward Surge
Current @t
Ps
I
FSM
2.0
A
Power Dissipation Pd 200 mW
Thermal Resistance Junction to Ambi
ent R
θJA
500 /W
Storage Temperature T
STG
-55~+150
Junction Temperature
T
j
-40~+125
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Electrical Ratings @Ta=25
Parameter Symbol
Min T
y
p
Ma
x
Unit Condit
i
ons
Reverse breakdown voltage
SD103AWS
SD103BWS
SD103CWS
V
(B
R)
40
30
20
V
I
R
=100μA
I
R
=100μA
I
R
=100μA
Forward voltage
V
F
0.37
0.60
V
I
F
=20mA
I
F
=200mA
Reverse curre nt
SD103AWS
SD103BWS
SD103CWS
I
RM
5.0 μA
V
R
=30V
V
R
=20V
V
R
=10V
Capacitance b etween terminals C
T
50 pF V
R
=0V,f=1.0MHz
Reverse recovery time
t
rr
10
ns
I
F
=I
R
=200mA
Irr=0.1XI
R
,R
L
=100
SD103AWS-SD103CWS