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1. BASE

2. EMITTER

3.

SOT–23

COLLECTOR

TRANSISTOR (PNP)

FEATURES

 High Collector Current

 Complementary to SS8050-MS

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage -40 V

V

CEO

Collector-Emitter Voltage -25 V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current -1.5 A

P

C

Collector Power Dissipation 300 mW

R

ΘJA

Thermal Resistance From Junction To Ambient 417

℃/W

T

J

,T

stg

Operation Junction and

Storage Temperature Range

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

V

(BR)CBO

I

C

=-100µA, I

E

=0 -40 V

Collector-emitter breakdown voltage

V

(BR)CEO

I

C

=-0.1mA, I

B

=0 -25 V

Emitter-base breakdown voltage

V

(BR)EBO

I

E

=-100µA, I

C

=0 -5 V

Collector cut-off current

I

CBO

V

CB

=-40V, I

E

=0 -100 nA

Collector cut-off current

I

CEO

V

CE

=-20V, I

B

=0 -100 nA

Emitter cut-off current

I

EBO

V

EB

=-5V, I

C

=0 -100 nA

h

FE(1)

V

CE

=-1V, I

C

=-100mA 120 400

DC current gain

h

FE(2)

V

CE

=-1V, I

C

=-800mA 40

Collector-emitter saturation voltage

V

CE(sat)

I

C

=-800mA, I

B

=-80mA -0.5 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=-800mA, I

B

=-80mA -1.2 V

Base-emitter voltage

V

BE

V

CE

=-1V, I

C

=-10mA -1 V

Transition frequency

f

T

V

CE

=-10V,I

C

=-50mA , f=30MHz 100 MHz

Collector output capacitance

C

ob

V

CB

=-10V, I

E

=0, f=1MHz 20 pF

CLASSIFICATION OF h

FE(1)

RANK L H J

RANGE 120–200 200–350 300–400

MARKING

Y2

SS8550-MS