Vishay Siliconix
Si7430DP
Document Number: 74282
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
1
N-Channel 150 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Q
gd
for Reduced dV/dt, Q
gd
and
Shoot-Through
• 100 % R
g
Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
• Single-Ended Power Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
150
0.045 at V
GS
= 10 V
26
23 nC
0.047 at V
GS
= 8 V
25
Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free)
Si7430DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N
-Channel MOSFET
G
D
S
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
26
A
T
C
= 70 °C
21
T
A
= 25 °C
7.2
b, c
T
A
= 70 °C
5.7
b, c
Pulsed Drain Current
I
DM
50
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
32
T
A
= 25 °C
4.5
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20
Single Pulse Avalanche Energy
E
AS
20
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
64
W
T
C
= 70 °C
44
T
A
= 25 °C
5.2
b, c
T
A
= 70 °C
3.3
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 10 s
R
thJA
19 24
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
1.5 1.8