REV 1.0 2020 JAN
PAGE:1/4
7N65F
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
DSS
650 V
Gate-Source Voltage V
GSS
±30 V
Avalanche Current (Note 2) I
AR
7 A
Drain Current
Continuous I
D
7 A
Pulsed (Note 2) I
DM
29.6 A
Avalanche Energy
Single Pulsed (Note 3) E
AS
530 mJ
Repetitive (Note 2) E
AR
14.2 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation
P
D
W
48
Junction Temperature T
J
+150 °C
Storage Temperature T
STG
-55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I
AS
= 7A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
4. I
SD
≤7A, di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
Features
● 650V,7A
● R
DS(ON)
= 0.94Ω (Typ.) @ V
GS
= 10V, I
D
=3.5A
● Fast Switching
● Improved dv/dt Capability
● 100% Avalanche Tested
Application
● Switch Mode Power Supply(SMPS)
● Uninterruptible Power Supply(UPS)
● Power Factor Correction (PFC)
N-Channel Enhancement Mode MOSFET
1.Gate
3.Source
2.Drain
(T
C
= 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
(FULLY INSULATED)
Dimensions in inches and (millimeters)
.412
.276
.122
(3.1)
.189
(4.8)
.158
.630
.550
.100
(2.54)
.060
.035
.138
(10.5)
(7.0)
(4.0)
(16.0)
(14.0)
(1.5)
(0.9)
(3.5)
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
3.4 MAX.
HOLE THRU
f
MAX.
MAX.
.133(3.4)
.102(2.6)
ITO-220F
Dimensions in inches and (millimeters)
MAX.
MAX.
1
2
3
PAGE:2/4
REV 1.0 2020 JAN
7N65F
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250μA 650 V
Drain-Source Leakage Current I
DSS
V
DS
= 650V, V
GS
= 0V 1 μA
Gate- Source Leakage Current
Forward
I
GSS
V
GS
= 30V, V
DS
= 0V 100 nA
Reverse V
GS
= -30V, V
DS
= 0V -100 nA
Breakdown Voltage Temperature Coefficient
△BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C 0.67 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage V
GS
(
TH
)
V
DS
= V
GS
, I
D
= 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance R
DS(ON)
V
GS
= 10V,
I
D
= 3.5A
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
V
DS
=25V, V
GS
=0V,
f=1.0 MHz
1400 pF
Output Capacitance C
OSS
180 pF
Reverse Transfer Capacitance C
RSS
16 21 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time t
D
(
ON
)
V
DD
=325V, I
D
=7.4A,
R
G
=25Ω (Note 1, 2)
70 ns
Turn-On Rise Time t
R
170 ns
Turn-Off Delay Time t
D
(
OFF
)
140 ns
Turn-Off Fall Time t
F
130 ns
SWITCHING CHARACTERISTICS
Total Gate Charge Q
G
V
DS
=520V, I
D
V
GS
=10 V (Note 1, 2)
29 38 nC
Gate-Source Charge Q
GS
7 nC
Gate-Drain Charge Q
GD
14.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage V
SD
V
GS
= 0V, I
S
= 7A
Maximum Continuous Drain-Source Diode
Forward Current
I
S
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
29.6 A
Reverse Recovery Time t
r
r
V
GS
= 0V, I
S
= 7A,
dI
F
/ dt = 100A/μs (Note 1)
320 ns
Reverse Recovery Charge Q
RR
2.4 μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.94
1.2
1.4 V
7 A
= 7A,
Electrical Characteristics
(T
C
=25℃ unless otherwise specified)