Rev.1.2. Aug. 2021
SLP7N65SV / SLF7N65SV
Msemitek Co., Ltd http://www.msemitek.com
SLP7N65SV / SLF7N65SV
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Msemitek‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 7.5A, 650V, R
DS(on)Max
=1.35Ω@V
GS
= 10 V
- Low gate charge ( typical 26nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25℃ unless otherwise noted
Symbol
Parameter
SLP7N65SV
SLF7N65SV
Units
V
DSS
Drain-Source Voltage
650
V
I
D
Drain Current - Continuous (T
C
= 25℃)
7.5
A
- Continuous (T
C
= 100℃)
4.2
A
I
DM
Drain Current - Pulsed
(Note 1)
28
A
V
GSS
Gate-Source Voltage
±
30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
281.3
mJ
I
AR
Avalanche Current
(Note 1)
7
A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
2.3
V/ns
P
D
Power Dissipation (T
C
= 25℃)
48
35
W
- Derate above 25℃
0.38
0.28
W/℃
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
℃
T
L
Maximum lead temperature for soldering purposes,
300
℃
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Max
Units
SLP7N65SV
SLF7N65SV
R
θJC
Thermal Resistance, Junction-to-Case
2.60
3.57
℃/W
R
θJA
Thermal Resistance, Junction-to-Ambient
110
62.5
℃/W
G
S
D
G D S
TO-220C
TO-220F
G D S
Rev.1.2. Aug. 2021
SLP7N65SV / SLF7N65SV
Msemitek Co., Ltd http://www.msemitek.com
Electrical Characteristics T
C
= 25℃unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 uA
650
--
--
V
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 uA, Referenced to 25℃
--
-
--
V/℃
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650 V, V
GS
= 0 V
--
--
1
uA
V
DS
= 520 V, T
C
= 125℃
--
--
10
uA
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3.5A
--
1.1
1.35
Ω
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
=3.5 A
(Note 4)
--
-
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1130
--
pF
C
oss
Output Capacitance
--
86.8
--
pF
C
rss
Reverse Transfer Capacitance
--
4.08
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DS
= 100 V,V
GS
= 10V, I
D
=8 A,
R
G
= 25 Ω
(Note 4, 5)
--
12
--
ns
t
r
Turn-On Rise Time
--
20
--
ns
t
d(off)
Turn-Off Delay Time
--
74
--
ns
t
f
Turn-Off Fall Time
--
33
--
ns
Q
g
Total Gate Charge
V
DS
= 520 V, I
D
= 8A,
V
GS
= 10 V
(Note 4, 5)
--
26
--
nC
Q
gs
Gate-Source Charge
--
4.78
--
nC
Q
gd
Gate-Drain Charge
--
5.82
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
7
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
28
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
=7A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
=7A,
--
506
--
ns
Q
rr
Reverse Recovery Charge
dI
F
/ dt = 100 A/us
(Note 4)
--
2.7
--
uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=10mH, I
AS
=7A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤ ID, di/dt ≤ 200A/us, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Part Number
Top Marking
Package
Packing Method
MOQ
QTY
SLP7N65SV
SLP7N65SV
T0-220C
Tube
1000
5000
SLF7N65SV
SLF7N65SV
T0-220F
Tube
1000
5000
Package Marking