www.xindamao.com.cn 1 / 6 2021.07Ver1.0
XD020M080AP1L3
20A,800V N-CHANNEL Power MOSFET
Features
◼ R
DS(on)
=0.22Ω (Max.) @V
GS
=10V,I
D
=20A
◼ New technology for high voltage device
◼ Low on-resistance
◼ Fast switching
Applications
◼ Power factor correction（PFC）
◼ Switched mode power supplies（SMPS）
◼ Uninterruptible Power Supply（UPS）
Key Performance and Package Parameters
Order codes
V
DS
I
D
R
DS(ON)
, Typ
T
vjmax
Marking
Package
XD020M080AP1L3
800V
20A
0.22Ω
150℃
D20M80AP1
TO220
Absolute Maximum Ratings (T
c
= 25℃ unless otherwise noted.)
Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
800
V
VGSS
Gate-Source Voltage
±30
V
I
D
Continuous Drain Current ( T
C
=25 ℃)
20
A
I
DM
Pulsed Drain Current
62
A
P
D
Maximum Power Dissipation ( TC=25 ℃)
205
W
EAS
Avalanche Energy, Single Pulse （note1）
485
mJ
T
J
Operating Junction Temperature Range
-55 to 150
℃
T
STG
Storage Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Conditions
Max.
Units
R
θJC
Thermal Resistance, Junction-to-Case (Steady State)
TO220
0.83
℃/W
www.xindamao.com.cn 2 / 6 2021.07Ver1.0
XD020M080AP1L3
Electrical Characteristics (T
c
= 25℃ unless otherwise noted.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
DS
= 250uA
800
---
---
V
IDSS
Zero Gate Voltage Drain Current
VDS=800V, VGS=0V
---
---
1
uA
IGSS
Gate Leakage Current, Forward
V
GS
=30V, V
DS
= 0V
---
---
100
nA
Gate Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
---
---
-100
nA
VGS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
DS
= 250uA
2.5
3.5
4.5
V
RDS(ON)
Drain-Source On-state Resistance
VGS=10V, IDS=10A
--
0.22
0.24
Qg
Total Gate Charge
V
DS
=480V
V
GS
=10V
I
DS
=10A
---
70
---
nC
Qgs
Gate-Source Charge
---
7.8
---
nC
Qgd
Gate-Drain Charge
---
0
---
nC
t
d(on)
Turn-on Delay Time
V
DD
=400V, V
GS
=10V
I
DS
=10A, R
G
=3.3Ω
---
25
---
ns
t
r
Turn-on Rise Time
--
55
--
ns
t
d(off)
Turn-off Delay Time
70
---
ns
t
f
Turn-off Fall Time
---
40
---
ns
C
iss
Input Capacitance
V
DS
=25V
V
GS
=0V
f = 1MHz
---
1400
---
pF
C
oss
Output Capacitance
---
350
---
pF
C
rss
Reverse Transfer Capacitance
---
20
---
pF
Diode Characteristics ( TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
V
SD
Diode Forward Voltage
I
SD
=20A, V
GS
=0V
---
1.0
1.45
V
t
rr
Diode Reverse Recovery
Time
I
SD
=10A,
dl
F
/dt=100A/us
---
475
---
ns
Q
rr
Diode Reverse Recovery
Charge
---
5.8
---
uC
Notes：
1. V
DD
=50V, I
AS
=3.5A, starting T
J
=25℃.