SFX5N50
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ORDERING INFORMATION
5A, 500V N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect
transistors are produced using advanced technology.
Features
◆I
D
=5A , V
DS
=500V
◆R
DS(ON)
TYP: 1.1Ω@V
GS
=10V I
D
=2.5A
MAX: 1.4Ω
Applications
◆Power faction correction (PFC)
◆Switched mode power supplies (SMPS)
◆Uninterruptible power supply (UPS)
◆LED lighting power
Part No. Package Marking Material Packing
SFF5N50 TO-220F-3L SFF5N50 Pb free Tube
SFD5N50 TO-252-2L SFD5N50 Pb free Reel
SFK5N50 SOT223-2L SFK5N50 Pb free Reel
SFX5N50
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ABSOLUTE MAXIMUM RATINGS
(T
J
=25
C unless otherwise noted)
Characteristics Symbol
Ratings
Unit
SFF5N50 SFD5N50 SFK5N50
Drain-Source Voltage V
DS
500 V
Gate-Source Voltage V
GS
±30 V
Drain Current
T
C
= 25
C
I
D
5
A
T
C
= 100C 3.5
Drain Current Pulsed
(Note
1)
I
DM
20 A
Power Dissipation(T
C
=25
C)
-Derate above 25
C
P
D
42 71 50 W
0.33 0.56 0.4 W/
C
Single Pulsed Avalanche Energy
(Note
2)
E
AS
390 mJ
Operation Junction Temperature Range T
J
-55～+150
C
Storage Temperature Range T
stg
-55～+150
C
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
C
THERMAL CHARACTERISTICS
Characteristics Symbol
MAX
Unit
SFF5N50 SFD5N50 SFK5N50
Thermal Resistance, Junction-to-Case R
θJC
2.97 1.76 2.5
C/W
Thermal Resistance, Junction-to-Ambient R
θJA
62.5 62.0 60
C/W