SOT
-
36
3 Plastic-Encap
sulate
MOSFET
S
2N7002KDW
N-channel MOSFET
SOT-
363
FEATURE
z
High density cell design for Low R
DS
（
on
）
z
Voltage controlled small signal switch
z
Rugged and reliable
z High saturation current capability
MOSFET MAXIMUM RATINGS (T
a
= 25°C
unless otherwise noted)
Symbol Paramete
r Value
Unit
V
DS
Drain-Source
voltage
60 V
I
D
Drain
C
u
rre
nt 340
mA
P
D
Powe
r Dissipation 0.15 W
T
J
Junctio
n
T
e
mperature 150
℃
T
stg
Storage Temperature -55-1
50
℃
R
θJA
Thermal Resistance
fromJunction to Ambient 833
℃ /W
z
ESD protected
V
GS
Gate-Source voltage
±20 V
MARKING
Equivalent Circuit
APPLICATION
z
z
Load Switch for Portable Devices
DC/DC Converter
V
(BR)DSS
R
DS(on)
MAX
I
D
60
V
2.5
Ω
@
10V
340m
A
3Ω
@
4.5V
1
2
3
6
5
4
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
1
www.jscj-elec.com
Rev. - 1.1
72K
72K=Device code
Solid dot1=Pin1 indicator
Solid dot2= Green molding compound device.
1
2
Paramete
r Symbol Test Condition Min Typ Max Units
Static Chara
cteristics
Drain-Source Breakd
own Voltage VDS
V
GS
= 0V
, ID
=2
50µA 60 V
Gate Th
reshold Voltage* V
GS(th)
V
DS
=V
GS
, I
D
=1
mA 1 1.3 2.5
V
Ze
ro Gate Voltage Drain Current I
DSS
V
DS
=48V,V
GS
= 0
V 1 µA
I
GSS1
V
GS
=±
20V, V
DS
= 0V
±10 µA
Gate –Source leaka
ge current
V
GS
= 4.5V, I
D
=200mA
1.1
3
Ω
Drain-Source On-Resistance* R
DS(on)
V
GS
=10V,I
D
=500mA 0.9
2.5
Ω
Diode
Forward Voltage VSD
V
GS
=0V, I
S
=300mA 1.5
V
Recovered ch
arge Q
r
V
GS
=0
V,I
S
=
300mA,V
R
=
25V,
dl
s/dt=-100A/µs
30 nC
Dy
namic Characteristics**
Input Capa
citance C
iss
40 pF
Output Capacitance Coss 30 pF
Reverse Tr
ansfer Capacitance C
rss
V
DS
=
10V,V
GS
=0
V,f
=1
MHz
10 pF
Sw
itching Characteristics**
Tu
rn-On Delay Time t
d(on)
10 ns
Tu
rn-Off Delay Time t
d(o
ff)
V
GS
=
10V,V
DD
=
50V,R
G
=5
0Ω,
R
GS=50Ω, RL=250Ω
15 ns
Reverse reco
very Time t
rr
V
GS
=0
V,I
S
=
300mA,V
R
=
25V,
dl
s/dt=-100A/µ
s
30 ns
G
A
TE-SOURC
E ZENER DIODE
Gate-Source Breakd
own Voltage BV
GSO
I
gs
=±1mA (Ope
n Drain) ±21.5 ±30 V
Notes :
*Pulse T
est : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
MOSFET ELECTRICAL CHARACTERISTICS
a
T =25
℃
unless otherwise specified
2
www.jscj-elec.com
Rev. - 1.1