RA4M3 Group Notes on RA4M3 Group High-Te mper a tur e O per at ion
R01AN5624EJ0100 Rev.1.00 Page 2 of 8
Nov.25.20
1. Relationshi p between Actual Usage Environments for RA4M3 Group
Microcontrollers and Reliability
1.1 Approaches to microcontroller reliability
We strongly recommend that customers follow the items described in this document to assure device
reliability when using RA4M3 Group microcontrollers.
Semiconductor device reliability is indicated by the failure rate curve (bathtub curve). This curve is divided
into three regions:
• The early failure region, in which failures occur at a relatively early time after device use (operation) is first
started.
• The random failure period, during which, after the early failure period, failures occur randomly across the
relatively long period during which the device is used,
• The wear-out failure period (end of service life), during which failures increase with the elapsing of the
time that is inherent life of the device. (See the Reliability Handbook, Revision 2.50 (R51ZZ0001EJ0250)
for further details on the bathtub curve.)
Of these regions, it is the wear-out failure region that is most strongly influenced by the thermal environment
in which the semiconductor device is used. The concept of derating is critical to assuring that RA4M3 Group
microcontrollers do not reach the wear-out failure region.
1.2 Derating
Derating is defined under JIS Z 8115 as the systematic reduction of load for the sake of improved reliability.
Derating is commonly applied to product groups, such as discreet components and power ICs, where
concern is required regarding the junction temperature due to the relationship between the generated power,
ambient temperature, and heat sink characteristics. Concern is required even if, in addition to the usage
conditions having wide ranges, operation is within those usage conditions (for example, voltage) from the
standpoint of the problem of heat generation, and, furthermore, adjustment is required between usage
conditions such as ambient temperature, junction temperature, current, and power, which have mutual
relationships.
See section 5.2.3, Derating, in the Reliability Handbook, Revision 2.50 (R51ZZ0001EJ0250) for further
details on derating.
This application note presents temperature profiles expected for representative high-temperature
applications and derating examples that the RA4M3 Group microcontrollers can support.