1. FEATURES
●
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
●
ESD Protected:1000V
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
– Continuous TC = 25°C
TC = 100°C
– Pulsed (Note 1)
Gate–Source Voltage
– Continuous
4. THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 2) @ TA = 25ºC
Derate above 25��C
Thermal Resistance,
Junction–to–Ambient(Note 2)
Junction and Storage temperature
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
2. FR–5 = 1.0×0.75×0.062 in.
−55∼+150
PD
RΘJA
1.8
556 ºC/W
ºC
115 mA, 60V N–Channel SC-70
±115
±75
IDM ±800
VGS ±20
L2N7002WT3G 6C 10000/Tape&Reel
Parameter Symbol Limits
Device
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60
Unit
Drain–Source Voltage VDSS
Marking Shipping
L2N7002WT1G 6C 3000/Tape&Reel
Drain Current ID
V
V
mA
Parameter Symbol Limits
60
– Non–repetitive (tp≤50μs) VGSM ±40
V
V
TJ,Tstg
Unit
225 mW
mW/ºC
SC70(SOT-323)
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
Small Signal MOSFET
2N7002WT1G, S-2N7002WT1G
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10μA)
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 V) TJ = 125°C
Gate–Body Leakage Current, Forward
(VGS = 20 V)
Gate–Body Leakage Current, Reverse
(VGS = - 20 V)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250μA)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 V)
Static Drain–Source On–State Voltage
(VGS = 10 V, ID = 500 mA)
(VGS = 5.0 V, ID = 50 mA)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mA) TC = 25°C
TC = 125°C
(VGS = 5.0 V, ID = 50 mA) TC = 25°C
TC = 125°C
Forward Transconductance
(VDS≥ 2.0 VDS(on), ID = 200 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mA, VGS = 0 V)
Source Current Continuous (Body Diode)
Source Current Pulsed
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
- -
800
115
ISM
mA
5.0
pF
VGS(th)
IDSS
gfs
mmhos
80 - -
IS
mA
- -
pF
pF
- 17 50
- 10 25
- 2.5
IGSSF
- - 1.0
Typ. Max.
IGSSR
- - -1.0
VBRDSS
V
60 - -
Symbol Min.
μA
μA
μA
Ohms
- -
V
Unit
1.0
V
mA
500
7.5
- 13.5
2.5
- -
13.5
7.5
1.6
- -
-
-
3.75
0.375
RDS(on)
-
-
1.0
ID(on)
500
VDS(on)
-
-
-
Turn-On Delay Time
(VDD = 25 V , ID =500
mA, RG = 25Ω,RL = 50
Ω,Vgen = 10 V)
Turn-Off Delay Time
td(off)
td(on)
VSD
V
- - 1.5
ns
- 11 40
- 7 20
Ciss
Coss
Crss
-
-
-
-
www.jxndcn.com
JXND ELECTRONICS CO.,LTD
Small Signal MOSFET
2N7002WT1G, S-2N7002WT1G