Document:S01PC0008
SEU0524PC
ESD Diode
Rev.A03
- 1
www.salltech.com
5R2P
S E U 05 2 4
Salltech
ESD
Cj
PC --X(Notice1)
DFN2510 package
4 channels
Uni-directional
5V Voltage
Features
Up to 4 lines protects
Ultra low junction capacitance (Max value: 0.8pF)
Peak Pulse Current (8/20μs) MAX：5A
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Low clamping voltage
Low leakage current
Working voltages:5V
RoHS Compliant
MechanicalCharacteristics
Package: DFN2510-10L
Lead Finish: Matte Tin
Case Material: “Gre en” Molding Compound.
UL Flammability Classification Rating94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Tape Reel :3000pcs
Appearance & Symbol
Package：DFN2510-10L
1、2、4、5：I/O
3、8：GND
6、7、9、10：NC
Applications
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation,Digital Cameras
Peripherals, Audio Players, Industrial Equipment
Automotive
Marking Information
5R2P=Marking Code
= Pin1 Logo
Part Number Information
Notice1: X is Customer special code, if there any questions, please contact with local sales
Rev.A03
- 2
www.salltech.com
Document:S01PC0008
SEU0524PC
ESD Diode
Absolute Maximum Ratings
(T=25ºC, RH=45%-75%, unless otherwisenoted)
Parameter
Symbol
Value
Unit
Peak Pulse Power (tp=8/20μs waveform)
P
pp
75
W
Peak Pulse Current (8/20µs)
I
PP
5
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
V
ESD
±15
±8
kV
Operating Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Electrical Characteristics (T
A
=25
℃
)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
5
V
Breakdown Voltage
V
BR
IT = 1mA
6
10
V
Reverse Leakage Current
I
R
V
RWM
= 5 V
1
µA
Clamping Voltage
V
C
I
PP
= 1A (8 x 20µs pulse), any I/O pin
to ground
10
V
Clamping Voltage
V
C
I
PP
= 5A (8 x 20µs pulse), any I/O pin
to ground
15
V
Junction Capacitance
C
J
V
R
= 0V, f = 1MHz, between I/O pins
0.3
0.4
pF
Junction Capacitance
C
J
V
R
= 0V, f = 1MHz, any I/O pin to
ground
0.8
pF