Document:S01PC0013
SEU0524PCS
ESD Diode
Rev.A01
- 1
www.salltech.com
U33S
S E U 05 2 4
Salltech
ESD
Cj
PCS --X(Notice1)
DFN2510 package
4 channels
Bi-directional
5V Voltage
Features
Up to 4 lines protects
Ultra low junction capacitance (Max value: 0.8pF)
Peak Pulse Current (8/20μs) MAX：8A
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Low clamping voltage
Low leakage current
Working voltages:5V
RoHS Compliant
MechanicalCharacteristics
Package: DFN2510-10L
Lead Finish: Matte Tin
Case Material: “Gre en” Molding Compound.
UL Flammability Classification Rating94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Tape Reel :3000pcs
Appearance & Symbol
Package：DFN2510-10L
1、2、4、5：I/O
3、8：GND
6、7、9、10：NC
Applications
Cellular Handsets and Accessories
Personal Digital Assistants
Notebooks and Handhelds
Portable Instrumentation,Digital Cameras
Peripherals, Audio Players, Industrial Equipment
Automotive
Marking Information
U33S=Marking Code
= Pin1 Logo
Part Number Information
Notice1: X is Customer special code, if there any questions, please contact with local sales
Rev.A01
- 2
www.salltech.com
Document:S01PC0013
SEU0524PCS
ESD Diode
Absolute Maximum Ratings
(T=25ºC, RH=45%-75%, unless otherwisenoted)
Parameter
Symbol
Value
Unit
Peak Pulse Power (tp=8/20μs waveform)
P
pp
70
W
Peak Pulse Current (8/20µs)
I
PP
8
A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
V
ESD
±15
±8
kV
Operating Temperature Range
T
J
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Electrical Characteristics (T
A
=25
℃
)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
5
V
Breakdown Voltage
V
BR
I
T
= 1mA (any IO to GND)
6
9
V
Reverse Leakage Current
I
R
VRWM =5V (any IO to GND)
1
µA
Forward Voltage
V
F
I
F
=10mA (any IO to GND)
1.1
V
Clamping Voltage
V
C
I
PP
= 1A (8/20µs, any IO to GND)
7
V
Clamping Voltage
V
C
I
PP
=8A (8/20µs, any IO to GND)
8.5
V
ESD Clamping Voltage
V
C
IPPTLP=16A, tp=2-100ns (any IO to
GND)
12
13.5
V
Junction Capacitance
C
J
VR = 0V, f = 1MHz(any IO to
GND)
0.7
0.8
pF