Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 5 A
MECHANICAL DATA
Case : SMB
Terminals: Solderable per MIL-STD-750, Method 2026
pprox. Weight : 0.055g / 0.002ozA
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Forward Voltage at 5A
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Maximum Average Forward Rectified Current
at T = 115 °C
c
Maximum DC Reverse Current T = 25 °C
a
at Rated DC Blocking Voltage T =125 °C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
T , T
j
stg
50 100 150 200 300 400
600
V
35 70 105 140 210 280 420
V
V
5
1.0
5
100
50
35
-55 ~ +150
A
A
V
μA
ns
°C
Symbols
Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
25 °C
Absolute Maximum Ratings and Characteristics
t
rr
pF
ES5AB ES5BB ES5CB ES5DB ES5EB ES5GB ES5JB
Units
50 100 150 200 300 400
600
1.25
1.7
FEATURES
For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU directives
Typical Thermal Resistance
R
θJA
R
θJC
45
15
°C/W
2
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Simplified outline SMB and symbol
1
2
100
Typical Junction Capacitance
at V =4V, f=1MHz
R
Maximum Reverse Recovery Time
1
.
2
1Measured with I = 0.5 A, I = 1 A, I = 0.25 A
F R rr
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
ES5ABG THRU ES5JBG
G
G
G
G
G
G
G
1 of 3
REV.08
Fig.3 Typical Reverse Characteristics
I - Current ( A)
R
Reverse μ
20 10060
0
0.1
1.0
10
% of PIV.VOLTS
100
40 80
300
T =25
J
°C
T =75
J
°C
T =125
J
°C
50 ohm
Noninductive
25Vdc
approx
+
-
D.U.T
10 ohm
Noninductive
NonInductive
1 ohm
OSCILLOSCOPE
Note 1
PULSE
GENERATOR
Note 2
Note1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
-0.25
-1.0
0
+0.5
t
rr
10ns/div
Set time Base for 10ns/div
Case Temperature (°C)
Junction Capacitance ( pF)
1.0 10 1000.1
1
10
100
Reverse Voltage (V)
T =25
J
°C
Fig.5 Typical Junction Capacitance
T =25
J
°C
f = 1.0MHz
V
sig
= 50mV
p-p
1
2
3
4
5
6
0
25 50
75
100 125 150 175
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
Single phase half-wave 60 Hz
resistive or inductive load
Fig.4 Typical CharacteristicsForward
2.0 2.5
1.5
0
0.01
0.1
1.0
10
0.5 1.0
0.001
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
T =25
J
°C
ES5JBG
ES5EBG/WS5GBG
ES5ABG~ES5DBG
20
40
60
80
100
140
00
10 100
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
Peak A)Forward Surage Current (
Number of Cycles
1
120
8.3 ms Single Half Sine Wave
(JEDEC Method)
2 of 3
REV.08
ES5ABG THRU ES5JBG