TRANSISTOR (NPN)
FEATURES
Complimentary to SS8550W
MARKING: Y1
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
40
V
V
CEO
Collector-Emitter Voltage 25
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous 1.5
A
P
C
Collector Power Dissipation
0.2
W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100μ
A
, I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 0.1mA, I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100μ
A
, I
C
=0
5
V
Collector cut-off current
I
CB
O
V
CB
=40V, I
E
=0
0.1
μ
A
Collector cut-off current
I
CE
O
V
CB
=20V, I
E
=0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
=0
0.1
μ
A
h
FE(1)
V
CE
=1V, I
C
= 100mA
120
400
DC current gain
h
FE(2)
V
CE
=1V, I
C
= 800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=800mA, I
B
= 80mA
0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=800mA, I
B
= 80mA
1.2
V
Transition frequency
f
T
V
CE
=10V, I
C
= 50mA
f=30MHz
100
MHz
SS8050W
CLASSIFICATION OF h
FE(1)
RANK L H J
RANGE 120–200 200–350 300–400
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
SS8050W
1 of 3
REV.08
