REV.08
1
of
3
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
40
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous
0.5
A
P
C
Collector Dissipation
0.2
W
T
j
Junction Temperature
150
℃
T
stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25���
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100
µA
, I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
µA
, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=40 V, I
E
=0
0.1
µA
Collector cut-off current
I
CEO
V
CB
=20V, I
E
=0
0.1
µA
Emitter cut-off current
I
EBO
V
EB
I= 5V,
C
=0
0.1
µA
H
FE(1)
V
CE
=1V, I
C
= 50mA
120
400
DC current gain
H
FE(2)
V
CE
=1V, I
C
= 500mA
50
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=500 mA, I
B
= 50mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=500 mA, I
B
= 50mA
1.2
V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA
f=30MHz
150 MHz
SOT-
523
1. BASE
2. EMITTER
3. COLLECTOR
S8050TH
S8050TH
TRANSISTOR
(NPN)
FEATURES
Complimentary to S8550T
Collector Current: I
C
=0.5A
MARKING: J3Y
MAXIMUM RATINGS (T
A
=25℃
unless otherwise noted)
