PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Non-reptitive Peak Forward Surge Current
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Continuous Forward Current
V
RRM
V
RMS
I
F
I
FSM
P
tot
120 200 250 V
100 150 200
V
250
-55 ~ +150
A
mW
°C
Units
T , T
j
stg
Symbols
FEATURES
▪ For surface mounted applications
▪ Glass Passivated Chip Junction
▪ Fast reverse recovery time
▪ Ideal for automated placement
▪ Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
▪ Case: SOD-123
mA
Repetitive Peak Forward Current
I
FRM
625
mA
at 1s
at 1ms
at 1 us
1
3
9
Absolute Maximum Ratings at 25 °C
Total Power Dissipation
500
Characteristics at T = 25 °C
a
Parameter
Reverse Voltage Breakdown at I =100
R
μA
V
(BR)R
120 200 250 V
Units
Symbols
BAV19W BAV20W BAV21W
Maximum Forward Voltage
V
F
V
at 100 m A
at 200 m A
1.00
1.25
Maximum DC Reverse Current T = 25 °C
a
at Rated DC Blocking Voltage T =150 °C
a
I
R
0.1
100
μA
5
pF
C
j
Typical Junction Capacitance
at V =4V, f=1MHz
R
Maximum Reverse Recovery Time
ns
t
rr
50
BAV19W BAV20W BAV21W
Simplified outline SOD-123 and symbol
1
2
BAV19W THRU BAV21W
1 of 3
REV.08
100
200
300
400
500
600
0.0
25 50
75
100 125 150 175
Fig.1 Forward Current Derating Curve
Total Power Dissipation (mW)
Ambient Temperature (°C)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
0.2 0.4 0.6 1.2 1.40.0
0.01
0.1
1.0
Instaneous Forward Voltage (V)
T =25
J
°C
Fig.2 Typical Reverse Characteristics
0.01
0.1
1
100
20 40 60 80 100 12000
percent of Rated Peak Voltage (%)Reverse
Instaneous Current（ A）Reverse μ
Fig.4 Typical Junction Capacitance
Junction Capacitance ( pF)
1.0 10 1000.1
1
10
100
Reverse Voltage (V)
T =25
J
°C
10
T =25
J
°C
T =150
J
°C
0.8 1.0 1.6
BAV19W THRU BAV21W
2 of 3
REV.08