R07DS1432EJ0100 Rev.1.00 Page 1 of 6
Mar.10.2021
Datasheet
RJK6006DPP-A0
600V - 5A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 1.4 typ. (at I
D
= 2.5 A, V
GS
= 10 V, Ta = 25 C)
Low leakage current
High speed switching
Quality grade: Standard
Outline
RENESAS Package code:
PRSS0003AP-A
(Package name:
TO-220FPA)
1
2
3
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
600 V
Gate to source voltage V
GSS
30 V
Drain current I
D
Notes4
5 A
Drain peak current I
D (pulse)
Notes1
15 A
Body-drain diode reverse drain current I
DR
5 A
Body-drain diode reverse drain peak current I
DR (pulse)
Notes1
15 A
Avalanche current I
AP
Notes3
5 A
Avalanche energy E
AR
Notes3
1.36 mJ
Channel dissipation Pch
Notes2
29 W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of
Semiconductor Devices) and individual reliability data
.
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25 C
3. STch = 25 C, Tch 150 C
4. Limited by maximum safe operation area
R07DS1432EJ0100
Rev.1.00
Mar.10.2021
RJK6006DPP-A0
R07DS1432EJ0100 Rev.1.00 Page 2 of 6
Mar.10.2021
Thermal Resistance Characteristics
(Ta = 25 C)
Item Symbol Max. Value
Notes5
Unit
Channel to case thermal impedance ch-c 4.31 CW
Notes: 5. Designed target value on Renesas measurement condition. (Not tested)
Electrical Characteristics
(Ta = 25 C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
600 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
— — 0.1 A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
3.0 — 4.5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 1.4 1.6  I
D
= 2.5 A, V
GS
= 10 V
Notes6
Input capacitance Ciss — 600 — pF V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Output capacitance Coss — 70 — pF
Reverse transfer capacitance Crss — 10 — pF
Turn-on delay time t
d(on)
— 25 — ns I
D
= 2.5 A
V
GS
= 10 V
R
L
= 80
Rg = 10
Rise time t
r
— 17 — ns
Turn-off delay time t
d(off)
— 60 — ns
Fall time t
f
— 10 — ns
Total gate charge Qg — 19 — nC V
DD
= 480 V
V
GS
= 10 V
I
D
= 5 A
Gate to source charge Qgs — 3.4 — nC
Gate to drain charge Qgd — 9.2 — nC
Body-drain diode forward voltage V
DF
— 0.9 1.5 V I
F
= 5 A, V
GS
= 0
Notes6
Body-drain diode reverse recovery time t
rr
— 250 — ns I
F
= 5 A, V
GS
= 0
di
F
dt = 100 As
Notes: 6. Pulse test