HMS100N15
N-Channel Super Trench Power MOSFET
Description
The HMS100N15 uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R
DS(ON)
and Q
g
. This device is ideal for high-frequency
switching and synchronous rectification.
General Features
● VDS =150V,ID =100A
RDS(ON) <7.5mΩ @ VGS=10V
● Excellent gate charge x R
DS(on)
product(FOM)
● Very low on-resistance R
DS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
Schematic diagram
Marking and pin assign men t
TO-220-3L top view
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
HMS110N15 HMS110N15 TO-220-3L - - -
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
150 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
100 A
Drain Current-Continuous(T
C
=100 )℃ I
D
(100℃) 70 A
Pulsed Drain Current
I
DM
300 A
Maximum Power Dissipation
P
D
300 W
Derating factor
2 W/℃
Single pulse avalanche energy
(Note 5)
E
AS
1296 mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 175 ℃
HMS100N15
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
0.5 /W℃
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 150 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=150V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 2.0 3.0 4.0 V
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=55A - 6.6 7.5 mΩ
Forward Transconductance g
FS
V
DS
=10V,I
D
=55A 70 - - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 10000 - PF
Output Capacitance C
oss
- 2046 - PF
Reverse Transfer Capacitance C
rss
V
DS
=75V,V
GS
=0V,
F=1.0MHz
- 55 - PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 30 - nS
Turn-on Rise Time t
r
- 52 - nS
Turn-Off Delay Time t
d(off)
- 69 - nS
Turn-Off Fall Time t
f
V
DD
=75V,I
D
=55A
V
GS
=10V,R
G
=4.7Ω
- 21 - nS
Total Gate Charge Q
g
- 150 nC
Gate-Source Charge Q
gs
- 50 nC
Gate-Drain Charge Q
gd
V
DS
=75V,I
D
=55A,
V
GS
=10V
- 26 nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
F
= I
S
- 1.2 V
Diode Forward Current
(Note 2)
I
S
- - 100 A
Reverse Recovery Time t
rr
- 140 nS
Reverse Recovery Charge Qrr
T
J
= 25°C, I
F
= I
S
di/dt = 100A/μs
(Note3)
- 498 nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25 ,V℃
DD
=50V,V
G
=10V,L=0.5mH,Rg=25Ω
HMS100N15