HMS10N15D
N-Channel Super Trench Power MOSFET
Description
The HMS10N15D uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
and Q
g
. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
● V
DS
=150V,I
D
=10A
R
DS(ON)
=57mΩ (typical) @ V
GS
=10V
● Excellent gate charge x R
DS(on)
product(FOM)
● Very low on-resistance R
DS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● LED backlighting
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
HMS10N15D HMS10N15D DFN5X6-8L Ø330mm 12mm 2500 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
150 V
Gate-Source Voltage V
GS
±20 V
Drain Current-Continuous I
D
10 A
Drain Current-Continuous(T
C
=100 )℃ I
D
(100℃) 31.8 A
Pulsed Drain Current I
DM
180 A
Maximum Power Dissipation P
D
130 W
Derating factor
0.87 W/℃
Single pulse avalanche energy
(Note 5)
E
AS
200 mJ
Operating Junction and Storage Temperature Range T
J
,T
STG
-55 To 175
℃
Thermal Characteristic
Thermal Résistance, Junction-to-Case
(Note 2)
R
θJC
1.15 /W℃
Marking and pin assign men t
HMS10N15D
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 150 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=150V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 1.4 2.0 2.5 V
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=20A - 57 75 mΩ
Gate resistance R
G
- 6.2 - Ω
Forward Transconductance g
FS
V
DS
=5V,I
D
=20A 15 - - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 1300 PF
Output Capacitance C
oss
- 162 PF
Reverse Transfer Capacitance C
rss
V
DS
=75V,V
GS
=0V,
F=1.0MHz
- 11.7 PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 10 - nS
Turn-on Rise Time t
r
- 6.5 - nS
Turn-Off Delay Time t
d(off)
- 16 - nS
Turn-Off Fall Time t
f
V
DD
=75V, RL=7.5Ω
V
GS
=10V,R
G
=3Ω
- 7 - nS
Total Gate Charge Q
g
- 21.1 - nC
Gate-Source Charge Q
gs
- 8 - nC
Gate-Drain Charge Q
gd
V
DS
=75V,I
D
=20A,
V
GS
=10V
- 4.6 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=20A - - 1.2 V
Diode Forward Current
(Note 2)
I
S
- - 10 A
Reverse Recovery Time t
rr
- 30 - nS
Reverse Recovery Charge Qrr
T
J
= 25°C, I
F
= I
S
di/dt = 100A/μs
(Note3)
- 135 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25 ,V℃
DD
=75V,V
G
=10V,L=0.5mH,Rg=25Ω