N-Channel Super Trench Power MOSFET
Description
The HMS150N04D uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
and Q
g
. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
● V
DS
=40V,I
D
=150A
R
DS(ON)
=1.6mΩ (typical) @ V
GS
=10V
R
DS(ON)
=1.9mΩ (typical) @ V
GS
=4.5V
● Excellent gate charge x R
DS(on)
product(FOM)
● Very low on-resistance R
DS(on)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
Schematic Diagram
Top View Bottom View
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
HMS150N04D HMS150N04D DFN5X6-8L - - -
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
40 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous (Silicon Limited)
I
D
150 A
Drain Current-Continuous(T
C
=100 )℃ I
D
(100℃) 106 A
Pulsed Drain Current (Package Limited)
I
DM
400 A
Maximum Power Dissipation
P
D
88 W
Derating factor
0.7 W/℃
Single pulse avalanche energy
(Note 5)
E
AS
720 mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
D D D D
D D D D
S S S G
G S S S
+061'
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
1.42 /W℃
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 40 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=40V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 1.2 1.5 2.2 V
V
GS
=10V, I
D
=75A - 1.6 1.8 mΩ
Drain-Source On-State Resistance R
DS(ON)
V
GS
=4.5V, I
D
=75A - 1.9 2.3 mΩ
Forward Transconductance g
FS
V
DS
=5V,I
D
=75A 80 - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 6000 7150 PF
Output Capacitance C
oss
- 1450 1700 PF
Reverse Transfer Capacitance C
rss
V
DS
=20V,V
GS
=0V,
F=1.0MHz
- 100 145 PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 12.5 - nS
Turn-on Rise Time t
r
- 7.0 - nS
Turn-Off Delay Time t
d(off)
- 50 - nS
Turn-Off Fall Time t
f
V
DD
=20V,I
D
=75A
V
GS
=10V,R
G
=1.6Ω
- 8.5 - nS
Total Gate Charge Q
g
- 95 115 nC
Gate-Source Charge Q
gs
- 15 nC
Gate-Drain Charge Q
gd
V
DS
=20V,I
D
=75A,
V
GS
=10V
- 11 nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=75A - 1.2 V
Diode Forward Current
(Note 2)
I
S
- - 150 A
Reverse Recovery Time t
rr
- 31 nS
Reverse Recovery Charge Qrr
T
J
= 25°C, I
F
= I
S
di/dt = 100A/μs
(Note3)
- 110 nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25 ,V℃
DD
=20V,V
G
=10V,L=0.5mH,Rg=25Ω
+061'