HM2301BWKR
Dual
P-Channel
Enhancement
Mode
Field
Effect
T
r
a
n
s
i
s
t
o
r
General
De
sc
r
i
p
ti
on
The
HM2301BWKR
uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and operation with
gate
voltages as low as 1.8V, in the small SOT363
footprint.
It can be used for a wide variety of applications, including
load switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV
HBM.
Fea
tu
r
e
s
V
DS
(V) = -20V
I
D
= -0.8A (VGS =
-4.5V)
R
DS(ON)
< 480m (V
GS
= -4.5V)
R
DS(ON)
< 950m (V
GS
=
-2.5V)
R
DS(ON)
<2200m (V
GS
=
-1.8V)
SC
70-6L
(SOT-363)
D1
D2
Pin1
Top View
Bottom
Vi
ew
S1
1
6
D1
G1
2
5 G2
G1
G2
D2
3
4
S2
S1
S2
Pin1
Absolute
Maximum Ratings T
A
=25°C unless
otherwise
no
t
e
d
Pa
r
a
m
e
t
e
r
S
y
m
bo
l
Ma
x
i
m
u
m
U
n
i
t
s
Drain-Source
Voltage
V
DS
-20
V
Gate-Source
Voltage
V
GS
±8
V
T
A
=25°C
-0.8
Continuous
Drain
Current
A
T
A
=70°C
I
D
-0.56
B
Pulsed Drain
Current
I
DM
-2.4
A
T
A
=25°C
0.3
Power Dissipation
A
T
A
=70°C
P
D
0.19
W
Junction and Storage Temperature
Range
T
J
,
T
STG
-55 to
150
°C
Thermal
C
h
a
r
a
c
t
e
r
i
s
t
i
cs
Pa
r
a
m
e
t
e
r
S
y
m
bo
l
Typ
Ma
x
U
n
i
t
s
Maximum
Junction-to-Ambient
A
t ≤
10s
360
415
°C/W
A
Maximum
Junction-to-Ambient
Steady-State
R
JA
400
460
°C/W
Maximum
Junction-to-Lead
C
Steady-State
R
JL
300
350
°C/W
HM2301BWKR
S
y
m
bo
l
Pa
r
a
m
e
t
e
r
C
ond
i
t
i
ons
M
i
n
T
yp
Ma
x
U
n
i
t
s
STATIC
P
A
R
A
METERS
BV
DSS
Drain-Source Breakdown
Vol
t
age
I
D
=-250 A,
V
GS
=0V
-20
V
V
DS
=-16V,
V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain
Curren
t
T
J
=55°C
-5
A
I
GSS
Gate-Body leakage
curren
t
V
DS
=0V,
V
GS
=±8V
±10 A
V
GS(th)
Gate Threshold
Vol
t
age
V
DS
=V
GS
I
D
=-250
A
-0
.
45
-1.2 V
I
D(ON)
On state drain
curren
t
V
GS
=-4.5V,
V
DS
=-5V
-3
A
V
GS
=-4.5V, I
D
=-0
.
8A
350
480
T
J
=125°C
440
670
m
V
GS
=-2.5V, I
D
=-0
.
5A
550
950 m
R
Static Drain-Source
On-Resis
t
ance
V
GS
=-1.8V, I
D
=-0
.
4A
780
2200 m
g
FS
Forward
Transconduc
t
ance
V
DS
=-5V, I
D
=-0
.
8A
1
.
7
S
V
SD
Diode Forward
Vol
t
age
I
S
=-0
.
5A
,
V
GS
=0V
-0
.
86
-1
V
I
S
Maximum Body-Diode Continuous
Curren
t
-0
.
4 A
DYNAMIC
P
A
R
A
METERS
C
iss
Input
Capaci
t
ance
114
140 pF
C
oss
Output
Capaci
t
ance
17
pF
C
rss
Reverse Transfer
Capaci
t
ance
V
GS
=0V, V
DS
=-10V, f
=1MHz
14
pF
R
g
Gate
resis
t
ance
V
GS
=0V, V
DS
=0V, f
=1MHz
12
17
SWITCHING
P
A
R
A
METERS
Q
g
Total Gate
Charge
1
.
44
1
.
8
nC
Q
gs
Gate Source
Charge
0
.
14
nC
Q
gd
Gate Drain
Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-0
.
8A
0
.
35
nC
t
D(on)
Turn-On
DelayTime
6
.
5
ns
t
r
Turn-On Rise
Time
6
.
5
ns
t
D(off)
Turn-Off
DelayTime
18
.
2
ns
t
f
Turn-Off Fall
Time
V
GS
=-4.5V,
V
DS
=-10V
,
R
L
=16.7 ,
R
GEN
=3
5
.
5
ns
t
rr
Body Diode Reverse Recovery
Time
I
F
=-0.8A, dI/dt=100A/
s
10
13
ns
Q
rr
Body Diode Reverse Recovery
Charge
I
F
=-0.8A, dI/dt=100A/
s
3
nC
Electrical
Characteristics
(T
J
=25°C
unless
otherwise
no
t
e
d
)
DS(ON)
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s
thermal
resistance
rating.
B: Repetitive rating, pulse width limited by junction
temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to
ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5%
max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C.
The
SOA curve provides a single pulse
rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS
CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT
DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
HM2301BWKR